Local interface composition and band discontinuities in heterovalent heterostructures

R. Nicolini; L. Vanzetti; Guido Mula; G. Bratina; L. Sorba; A. Franciosi; M. Peressi; S. Baroni; R. Resta; A. Baldereschi; J. E. Angelo; W. W. Gerberich

doi:10.1103/PhysRevLett.72.294

Local interface composition and band discontinuities in heterovalent heterostructures

R. Nicolini
, L. Vanzetti
, Guido Mula
, G. Bratina
, L. Sorba
, A. Franciosi
, M. Peressi
, S. Baroni
, R. Resta
, A. Baldereschi
, J. E. Angelo
, W. W. Gerberich

Chemical Engineering and Materials Science

Research output: Contribution to journal › Article › peer-review

141 Scopus citations

Abstract

The local Zn/Se relative concentration at the interface in ZnSe-GaAs(001) heterostructures synthesized by molecular beam epitaxy was found to be controlled by the Zn/Se flux ratio employed during the early growth stage of ZnSe on GaAs. Correspondingly, the valence band discontinuity varies from 1.20 eV (Zn-rich interface) to 0.58 eV (Se-rich interface). Comparison with the results of first-principles calculations suggests that the observed trend in band offsets is related to the establishment of neutral interfaces with different atomic configurations.

Original language	English (US)
Pages (from-to)	294-297
Number of pages	4
Journal	Physical review letters
Volume	72
Issue number	2
DOIs	https://doi.org/10.1103/PhysRevLett.72.294
State	Published - 1994

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10.1103/PhysRevLett.72.294

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title = "Local interface composition and band discontinuities in heterovalent heterostructures",

abstract = "The local Zn/Se relative concentration at the interface in ZnSe-GaAs(001) heterostructures synthesized by molecular beam epitaxy was found to be controlled by the Zn/Se flux ratio employed during the early growth stage of ZnSe on GaAs. Correspondingly, the valence band discontinuity varies from 1.20 eV (Zn-rich interface) to 0.58 eV (Se-rich interface). Comparison with the results of first-principles calculations suggests that the observed trend in band offsets is related to the establishment of neutral interfaces with different atomic configurations.",

author = "R. Nicolini and L. Vanzetti and Guido Mula and G. Bratina and L. Sorba and A. Franciosi and M. Peressi and S. Baroni and R. Resta and A. Baldereschi and Angelo, \{J. E.\} and Gerberich, \{W. W.\}",

year = "1994",

doi = "10.1103/PhysRevLett.72.294",

language = "English (US)",

volume = "72",

pages = "294--297",

journal = "Physical review letters",

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T1 - Local interface composition and band discontinuities in heterovalent heterostructures

AU - Nicolini, R.

AU - Vanzetti, L.

AU - Mula, Guido

AU - Bratina, G.

AU - Sorba, L.

AU - Franciosi, A.

AU - Peressi, M.

AU - Baroni, S.

AU - Resta, R.

AU - Baldereschi, A.

AU - Angelo, J. E.

AU - Gerberich, W. W.

PY - 1994

Y1 - 1994

N2 - The local Zn/Se relative concentration at the interface in ZnSe-GaAs(001) heterostructures synthesized by molecular beam epitaxy was found to be controlled by the Zn/Se flux ratio employed during the early growth stage of ZnSe on GaAs. Correspondingly, the valence band discontinuity varies from 1.20 eV (Zn-rich interface) to 0.58 eV (Se-rich interface). Comparison with the results of first-principles calculations suggests that the observed trend in band offsets is related to the establishment of neutral interfaces with different atomic configurations.

AB - The local Zn/Se relative concentration at the interface in ZnSe-GaAs(001) heterostructures synthesized by molecular beam epitaxy was found to be controlled by the Zn/Se flux ratio employed during the early growth stage of ZnSe on GaAs. Correspondingly, the valence band discontinuity varies from 1.20 eV (Zn-rich interface) to 0.58 eV (Se-rich interface). Comparison with the results of first-principles calculations suggests that the observed trend in band offsets is related to the establishment of neutral interfaces with different atomic configurations.

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DO - 10.1103/PhysRevLett.72.294

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SN - 0031-9007

VL - 72

SP - 294

EP - 297

JO - Physical review letters

JF - Physical review letters

IS - 2

ER -

Local interface composition and band discontinuities in heterovalent heterostructures

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