Abstract
The local Zn/Se relative concentration at the interface in ZnSe-GaAs(001) heterostructures synthesized by molecular beam epitaxy was found to be controlled by the Zn/Se flux ratio employed during the early growth stage of ZnSe on GaAs. Correspondingly, the valence band discontinuity varies from 1.20 eV (Zn-rich interface) to 0.58 eV (Se-rich interface). Comparison with the results of first-principles calculations suggests that the observed trend in band offsets is related to the establishment of neutral interfaces with different atomic configurations.
Original language | English (US) |
---|---|
Pages (from-to) | 294-297 |
Number of pages | 4 |
Journal | Physical review letters |
Volume | 72 |
Issue number | 2 |
DOIs | |
State | Published - 1994 |