Abstract
A study of lithographic approach to pattern self-assembled nanoparticle multilayers was carried out using silicon-based lithographical technology. The advantages of the method include a simpler process with micron feature size and very good reproducibility and also can be applied to almost all charged nanoscale building blocks. The results showed that this method provides a technology for nanodevices such as nanoelectronic chips or NEMS, which have a variety of potential applications.
| Original language | English (US) |
|---|---|
| Pages (from-to) | 6712-6715 |
| Number of pages | 4 |
| Journal | Langmuir |
| Volume | 18 |
| Issue number | 17 |
| DOIs | |
| State | Published - Aug 20 2002 |