Abstract
The ductile–brittle transition of nano/microscale silicon is explored at low-temperature, high stress conditions. A pathway to eventual mechanism maps describing this ductile–brittle transition behavior using sample size, strain rate, and temperature is outlined. First, a discussion of variables controlling the BDT in silicon is given and discussed in the context of development of eventual modeling that could simultaneously incorporate all their effects. For description of energy dissipation by dislocation nucleation from a crack tip, three critical input parameters are identified: the effective stress, activation volume, and activation energy for dislocation motion. These are discussed individually relating to the controlling variables for the BDT. Lastly, possibilities for measuring these parameters experimentally are also described.
| Original language | English (US) |
|---|---|
| Pages (from-to) | 5839-5844 |
| Number of pages | 6 |
| Journal | Metallurgical and Materials Transactions A: Physical Metallurgy and Materials Science |
| Volume | 47 |
| Issue number | 12 |
| DOIs | |
| State | Published - Dec 1 2016 |
Bibliographical note
Funding Information:Parts of this work were carried out in the Characterization Facility and the Minnesota Nanocenter, University of Minnesota, which receives partial support from NSF through the MRSEC program. The authors would like to thank Hysitron for their support along with providing facilities for the high-temperature SEM testing. Research by the second author was performed under appointment of the Rickover Fellowship Program in Nuclear Engineering sponsored by the Naval Reactor Division of the U.S. Department of Energy.
Publisher Copyright:
© 2016, The Minerals, Metals & Materials Society and ASM International.