Linear in-plane uniaxial stress effects on the device characteristics of AlGaAs/GaAs modulation doped field effect transistors

A. K. Fung, L. Cong, J. D. Albrecht, M. I. Nathan, P P Ruden, H. Shtrikman

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Abstract

The current voltage relationships of AlGaAs/GaAs modulation doped field effect transistors (MODFETs) were measured as a function of applied uniaxial stress. Stresses in the [110] and [110] directions on MODFETs that were grown on a (001) substrate produced threshold shifts of opposite sign. Stresses in [110] and [110] directions resulted in threshold voltage pressure coefficients of -15 and 64 mV/Kbar, respectively. The asymmetric shifts in the threshold voltages are attributed to piezoelectric effects. In addition, stress induced changes in the slopes of the transconductance versus gate-to-source voltage relationships were also measured. For stresses in the [110] and [110] directions, the dependencies were 0.4 and -0.7 mS/(V Kbar), respectively.

Original languageEnglish (US)
Pages (from-to)502-505
Number of pages4
JournalJournal of Applied Physics
Volume81
Issue number1
DOIs
StatePublished - Jan 1 1997

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