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Limits in detecting an individual dopant atom embedded in a crystal

Research output: Contribution to journalArticlepeer-review

Abstract

Annular dark field scanning transmission electron microscope (ADF-STEM) images allow detection of individual dopant atoms located on the surface of or inside a crystal. Contrast between intensities of an atomic column containing a dopant atom and a pure atomic column in ADF-STEM image depends strongly on specimen parameters and microscope conditions. Analysis of multislice-based simulations of ADF-STEM images of crystals doped with one substitutional dopant atom for a wide range of crystal thicknesses, types and locations of dopant atom inside the crystal, and crystals with different atoms reveal some interesting trends and non-intuitive behaviours in visibility of the dopant atom. The results provide practical guidelines to determine the optimal microscope and specimen conditions to detect a dopant atom in experiment, obtain information about the 3-d location of a dopant atom, and recognize cases where detecting a single dopant atom is not possible.

Original languageEnglish (US)
Pages (from-to)1101-1110
Number of pages10
JournalUltramicroscopy
Volume111
Issue number8
DOIs
StatePublished - Jul 2011

Bibliographical note

Funding Information:
This work was supported partially by the MRSEC Program of the National Science Foundation under Award Number DMR-0819885 and the Abu Dhabi-Minnesota Institute for Research Excellence (ADMIRE); a partnership between the Petroleum Institute of Abu Dhabi and the Department of Chemical Engineering and Materials Science of the University of Minnesota. We acknowledge receiving technical help from Dr. Ravi Chityala and access to computational resources from University of Minnesota Supercomputing Institute.

Keywords

  • ADF
  • Annular dark field
  • Dopant
  • Ge
  • High resolution
  • Imaging
  • Multislice
  • STEM
  • Scanning transmission electron microscope
  • Si
  • Simulations

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