Leveraging Circuit Reliability Effects for Designing Robust and Secure Physical Unclonable Functions

M. Kim; G. Park; P. Chiu; C. H. Kim

doi:10.1109/IEDM19573.2019.8993667

Leveraging Circuit Reliability Effects for Designing Robust and Secure Physical Unclonable Functions

M. Kim, G. Park, P. Chiu, C. H. Kim

Electrical and Computer Engineering

Research output: Chapter in Book/Report/Conference proceeding › Conference contribution

Abstract

Reliability mechanisms are undesirable from a product lifetime point of view, but their unique characteristics enable novel applications such as one-time-programmable memory, secure chip odometers, and physical unclonable functions (PUFs). In this invited paper, we will discuss how reliability mechanisms can be leveraged for the aforementioned applications, and then introduce a novel SRAM PUF design where the power up state of the SRAM cell is programmed into a local metal fuse using the electromigration phenomenon for improved stability.

Original language	English (US)
Title of host publication	2019 IEEE International Electron Devices Meeting, IEDM 2019
Publisher	Institute of Electrical and Electronics Engineers Inc.
ISBN (Electronic)	9781728140315
DOIs	https://doi.org/10.1109/IEDM19573.2019.8993667
State	Published - Dec 2019
Event	65th Annual IEEE International Electron Devices Meeting, IEDM 2019 - San Francisco, United States Duration: Dec 7 2019 → Dec 11 2019

Publication series

Name	Technical Digest - International Electron Devices Meeting, IEDM
Volume	2019-December
ISSN (Print)	0163-1918

Conference

Conference	65th Annual IEEE International Electron Devices Meeting, IEDM 2019
Country/Territory	United States
City	San Francisco
Period	12/7/19 → 12/11/19

Bibliographical note

Funding Information:
ACKNOWLEDGMENT This work was supported in part by the Semiconductor Research Corporation (SRC) and the Texas Analog Center of Excellence (TxACE).

Publisher Copyright:
© 2019 IEEE.

Publisher link

10.1109/IEDM19573.2019.8993667

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Kim, M., Park, G., Chiu, P., & Kim, C. H. (2019). Leveraging Circuit Reliability Effects for Designing Robust and Secure Physical Unclonable Functions. In 2019 IEEE International Electron Devices Meeting, IEDM 2019 Article 8993667 (Technical Digest - International Electron Devices Meeting, IEDM; Vol. 2019-December). Institute of Electrical and Electronics Engineers Inc.. https://doi.org/10.1109/IEDM19573.2019.8993667

Leveraging Circuit Reliability Effects for Designing Robust and Secure Physical Unclonable Functions. / Kim, M.; Park, G.; Chiu, P. et al.
2019 IEEE International Electron Devices Meeting, IEDM 2019. Institute of Electrical and Electronics Engineers Inc., 2019. 8993667 (Technical Digest - International Electron Devices Meeting, IEDM; Vol. 2019-December).

Research output: Chapter in Book/Report/Conference proceeding › Conference contribution

Kim, M, Park, G, Chiu, P & Kim, CH 2019, Leveraging Circuit Reliability Effects for Designing Robust and Secure Physical Unclonable Functions. in 2019 IEEE International Electron Devices Meeting, IEDM 2019., 8993667, Technical Digest - International Electron Devices Meeting, IEDM, vol. 2019-December, Institute of Electrical and Electronics Engineers Inc., 65th Annual IEEE International Electron Devices Meeting, IEDM 2019, San Francisco, United States, 12/7/19. https://doi.org/10.1109/IEDM19573.2019.8993667

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abstract = "Reliability mechanisms are undesirable from a product lifetime point of view, but their unique characteristics enable novel applications such as one-time-programmable memory, secure chip odometers, and physical unclonable functions (PUFs). In this invited paper, we will discuss how reliability mechanisms can be leveraged for the aforementioned applications, and then introduce a novel SRAM PUF design where the power up state of the SRAM cell is programmed into a local metal fuse using the electromigration phenomenon for improved stability.",

author = "M. Kim and G. Park and P. Chiu and Kim, \{C. H.\}",

note = "Funding Information: ACKNOWLEDGMENT This work was supported in part by the Semiconductor Research Corporation (SRC) and the Texas Analog Center of Excellence (TxACE). Publisher Copyright: {\textcopyright} 2019 IEEE.; 65th Annual IEEE International Electron Devices Meeting, IEDM 2019 ; Conference date: 07-12-2019 Through 11-12-2019",

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N1 - Funding Information: ACKNOWLEDGMENT This work was supported in part by the Semiconductor Research Corporation (SRC) and the Texas Analog Center of Excellence (TxACE). Publisher Copyright: © 2019 IEEE.

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N2 - Reliability mechanisms are undesirable from a product lifetime point of view, but their unique characteristics enable novel applications such as one-time-programmable memory, secure chip odometers, and physical unclonable functions (PUFs). In this invited paper, we will discuss how reliability mechanisms can be leveraged for the aforementioned applications, and then introduce a novel SRAM PUF design where the power up state of the SRAM cell is programmed into a local metal fuse using the electromigration phenomenon for improved stability.

AB - Reliability mechanisms are undesirable from a product lifetime point of view, but their unique characteristics enable novel applications such as one-time-programmable memory, secure chip odometers, and physical unclonable functions (PUFs). In this invited paper, we will discuss how reliability mechanisms can be leveraged for the aforementioned applications, and then introduce a novel SRAM PUF design where the power up state of the SRAM cell is programmed into a local metal fuse using the electromigration phenomenon for improved stability.

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T3 - Technical Digest - International Electron Devices Meeting, IEDM

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Leveraging Circuit Reliability Effects for Designing Robust and Secure Physical Unclonable Functions

Abstract

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