Abstract
Reliability mechanisms are undesirable from a product lifetime point of view, but their unique characteristics enable novel applications such as one-time-programmable memory, secure chip odometers, and physical unclonable functions (PUFs). In this invited paper, we will discuss how reliability mechanisms can be leveraged for the aforementioned applications, and then introduce a novel SRAM PUF design where the power up state of the SRAM cell is programmed into a local metal fuse using the electromigration phenomenon for improved stability.
Original language | English (US) |
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Title of host publication | 2019 IEEE International Electron Devices Meeting, IEDM 2019 |
Publisher | Institute of Electrical and Electronics Engineers Inc. |
ISBN (Electronic) | 9781728140315 |
DOIs | |
State | Published - Dec 2019 |
Event | 65th Annual IEEE International Electron Devices Meeting, IEDM 2019 - San Francisco, United States Duration: Dec 7 2019 → Dec 11 2019 |
Publication series
Name | Technical Digest - International Electron Devices Meeting, IEDM |
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Volume | 2019-December |
ISSN (Print) | 0163-1918 |
Conference
Conference | 65th Annual IEEE International Electron Devices Meeting, IEDM 2019 |
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Country/Territory | United States |
City | San Francisco |
Period | 12/7/19 → 12/11/19 |
Bibliographical note
Funding Information:ACKNOWLEDGMENT This work was supported in part by the Semiconductor Research Corporation (SRC) and the Texas Analog Center of Excellence (TxACE).
Publisher Copyright:
© 2019 IEEE.