Leakage current reduction mechanism of oxide-nitride-oxide inter-poly dielectrics through the post plasma oxidation treatment

Woong Lee; Jeonggeun Jee; Dae Han Yoo; Eun Young Lee; Jinkwon Bok; Younwoo Hyung; Seoksik Kim; Chang Jin Kang; Joo Tae Moon; Yonghan Roh

doi:10.1143/JJAP.50.041501

Leakage current reduction mechanism of oxide-nitride-oxide inter-poly dielectrics through the post plasma oxidation treatment

Woong Lee, Jeonggeun Jee, Dae Han Yoo, Eun Young Lee, Jinkwon Bok, Younwoo Hyung, Seoksik Kim, Chang Jin Kang, Joo Tae Moon, Yonghan Roh

Electrical and Computer Engineering

Research output: Contribution to journal › Article › peer-review

3 Scopus citations

Abstract

High quality oxide-nitride-oxide (ONO) inter-poly dielectrics were successfully fabricated by the optimized plasma oxidation without H₂. The bottom low pressure chemical vapor deposition (LPCVD) oxides treated by the conventional N₂O annealing step were subjected to the post deposition process using a plasma treatment. This process reduces both the leakage current and the stress-induced leakage current (SILC), while no thickness increase of the bottom LPCVD oxides was observed due to the plasma treatment. Based on the photo electron injection technique, it is found that the O₂ plasma oxidation method significantly reduces the defect centers located at 1.67nm away from the bottom oxide/floating gate interface.

Original language	English (US)
Article number	041501
Journal	Japanese Journal of Applied Physics
Volume	50
Issue number	4 PART 1
DOIs	https://doi.org/10.1143/JJAP.50.041501
State	Published - Apr 2011

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10.1143/JJAP.50.041501

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title = "Leakage current reduction mechanism of oxide-nitride-oxide inter-poly dielectrics through the post plasma oxidation treatment",

abstract = "High quality oxide-nitride-oxide (ONO) inter-poly dielectrics were successfully fabricated by the optimized plasma oxidation without H2. The bottom low pressure chemical vapor deposition (LPCVD) oxides treated by the conventional N2O annealing step were subjected to the post deposition process using a plasma treatment. This process reduces both the leakage current and the stress-induced leakage current (SILC), while no thickness increase of the bottom LPCVD oxides was observed due to the plasma treatment. Based on the photo electron injection technique, it is found that the O2 plasma oxidation method significantly reduces the defect centers located at 1.67nm away from the bottom oxide/floating gate interface.",

author = "Woong Lee and Jeonggeun Jee and Yoo, {Dae Han} and Lee, {Eun Young} and Jinkwon Bok and Younwoo Hyung and Seoksik Kim and Kang, {Chang Jin} and Moon, {Joo Tae} and Yonghan Roh",

year = "2011",

month = apr,

doi = "10.1143/JJAP.50.041501",

language = "English (US)",

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journal = "Japanese Journal of Applied Physics",

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publisher = "Japan Society of Applied Physics",

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T1 - Leakage current reduction mechanism of oxide-nitride-oxide inter-poly dielectrics through the post plasma oxidation treatment

AU - Lee, Woong

AU - Jee, Jeonggeun

AU - Yoo, Dae Han

AU - Lee, Eun Young

AU - Bok, Jinkwon

AU - Hyung, Younwoo

AU - Kim, Seoksik

AU - Kang, Chang Jin

AU - Moon, Joo Tae

AU - Roh, Yonghan

PY - 2011/4

Y1 - 2011/4

N2 - High quality oxide-nitride-oxide (ONO) inter-poly dielectrics were successfully fabricated by the optimized plasma oxidation without H2. The bottom low pressure chemical vapor deposition (LPCVD) oxides treated by the conventional N2O annealing step were subjected to the post deposition process using a plasma treatment. This process reduces both the leakage current and the stress-induced leakage current (SILC), while no thickness increase of the bottom LPCVD oxides was observed due to the plasma treatment. Based on the photo electron injection technique, it is found that the O2 plasma oxidation method significantly reduces the defect centers located at 1.67nm away from the bottom oxide/floating gate interface.

AB - High quality oxide-nitride-oxide (ONO) inter-poly dielectrics were successfully fabricated by the optimized plasma oxidation without H2. The bottom low pressure chemical vapor deposition (LPCVD) oxides treated by the conventional N2O annealing step were subjected to the post deposition process using a plasma treatment. This process reduces both the leakage current and the stress-induced leakage current (SILC), while no thickness increase of the bottom LPCVD oxides was observed due to the plasma treatment. Based on the photo electron injection technique, it is found that the O2 plasma oxidation method significantly reduces the defect centers located at 1.67nm away from the bottom oxide/floating gate interface.

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Leakage current reduction mechanism of oxide-nitride-oxide inter-poly dielectrics through the post plasma oxidation treatment

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