Laterally-scaled Si/SiGe n-MODFETs with in situ and ion-implanted p-well doping

S. J. Koester; K. L. Saenger; J. O. Chu; Q. C. Ouyang; J. A. Ott; D. F. Canaperi; J. A. Tornello; C. V. Jahnes; S. E. Steen

doi:10.1109/DRC.2004.1367806

Laterally-scaled Si/SiGe n-MODFETs with in situ and ion-implanted p-well doping

S. J. Koester
, K. L. Saenger
, J. O. Chu
, Q. C. Ouyang
, J. A. Ott
, D. F. Canaperi
, J. A. Tornello
, C. V. Jahnes
, S. E. Steen

Electrical and Computer Engineering

Research output: Chapter in Book/Report/Conference proceeding › Conference contribution

4 Scopus citations

Abstract

The operation of laterally-scaled Silicon (Si)/SiGe n-MODFETs with buried in situ and ion-impanted p-well doping was investigated. The layer stuctures were grown by UHV-chemical vapor deposition (CVD) on 8 inch Si wafers and consisted of a Si _0.7Ge _0.3 bottom barrier layer, a Si quantum well, a top undoped Si _0.7Ge _0.3 spacer layer and a Si cap layer. MODFETs utilizing implanted p-wells were characterized using dc I-V measurements at room temperature. Results show that the devices have improved subthreshold behavior, greatly improved self-gain and improved speed-power product compared with undoped controls.

Original language	English (US)
Title of host publication	Device Research Conference - Conference Digest, 62nd DRC
Pages	107-108
Number of pages	2
DOIs	https://doi.org/10.1109/DRC.2004.1367806
State	Published - Dec 1 2004
Event	Device Research Conference - Conference Digest, 62nd DRC - Notre Dame, IN, United States Duration: Jun 21 2004 → Jun 23 2004

Publication series

Name	Device Research Conference - Conference Digest, DRC
ISSN (Print)	1548-3770

Other

Other	Device Research Conference - Conference Digest, 62nd DRC
Country/Territory	United States
City	Notre Dame, IN
Period	6/21/04 → 6/23/04

UN SDGs

This output contributes to the following UN Sustainable Development Goals (SDGs)

Publisher link

10.1109/DRC.2004.1367806

Find It

Find It at U of M Libraries

Cite this

Koester, S. J., Saenger, K. L., Chu, J. O., Ouyang, Q. C., Ott, J. A., Canaperi, D. F., Tornello, J. A., Jahnes, C. V., & Steen, S. E. (2004). Laterally-scaled Si/SiGe n-MODFETs with in situ and ion-implanted p-well doping. In Device Research Conference - Conference Digest, 62nd DRC (pp. 107-108). Article III.-28 (Device Research Conference - Conference Digest, DRC). https://doi.org/10.1109/DRC.2004.1367806

Koester, SJ, Saenger, KL, Chu, JO, Ouyang, QC, Ott, JA, Canaperi, DF, Tornello, JA, Jahnes, CV & Steen, SE 2004, Laterally-scaled Si/SiGe n-MODFETs with in situ and ion-implanted p-well doping. in Device Research Conference - Conference Digest, 62nd DRC., III.-28, Device Research Conference - Conference Digest, DRC, pp. 107-108, Device Research Conference - Conference Digest, 62nd DRC, Notre Dame, IN, United States, 6/21/04. https://doi.org/10.1109/DRC.2004.1367806

@inproceedings{34db42e4f12544018230fa242a729a20,

title = "Laterally-scaled Si/SiGe n-MODFETs with in situ and ion-implanted p-well doping",

abstract = "The operation of laterally-scaled Silicon (Si)/SiGe n-MODFETs with buried in situ and ion-impanted p-well doping was investigated. The layer stuctures were grown by UHV-chemical vapor deposition (CVD) on 8 inch Si wafers and consisted of a Si 0.7Ge 0.3 bottom barrier layer, a Si quantum well, a top undoped Si 0.7Ge 0.3 spacer layer and a Si cap layer. MODFETs utilizing implanted p-wells were characterized using dc I-V measurements at room temperature. Results show that the devices have improved subthreshold behavior, greatly improved self-gain and improved speed-power product compared with undoped controls.",

author = "Koester, \{S. J.\} and Saenger, \{K. L.\} and Chu, \{J. O.\} and Ouyang, \{Q. C.\} and Ott, \{J. A.\} and Canaperi, \{D. F.\} and Tornello, \{J. A.\} and Jahnes, \{C. V.\} and Steen, \{S. E.\}",

year = "2004",

month = dec,

day = "1",

doi = "10.1109/DRC.2004.1367806",

language = "English (US)",

isbn = "0780382846",

series = "Device Research Conference - Conference Digest, DRC",

pages = "107--108",

booktitle = "Device Research Conference - Conference Digest, 62nd DRC",

note = "Device Research Conference - Conference Digest, 62nd DRC ; Conference date: 21-06-2004 Through 23-06-2004",

}

TY - GEN

T1 - Laterally-scaled Si/SiGe n-MODFETs with in situ and ion-implanted p-well doping

AU - Koester, S. J.

AU - Saenger, K. L.

AU - Chu, J. O.

AU - Ouyang, Q. C.

AU - Ott, J. A.

AU - Canaperi, D. F.

AU - Tornello, J. A.

AU - Jahnes, C. V.

AU - Steen, S. E.

PY - 2004/12/1

Y1 - 2004/12/1

N2 - The operation of laterally-scaled Silicon (Si)/SiGe n-MODFETs with buried in situ and ion-impanted p-well doping was investigated. The layer stuctures were grown by UHV-chemical vapor deposition (CVD) on 8 inch Si wafers and consisted of a Si 0.7Ge 0.3 bottom barrier layer, a Si quantum well, a top undoped Si 0.7Ge 0.3 spacer layer and a Si cap layer. MODFETs utilizing implanted p-wells were characterized using dc I-V measurements at room temperature. Results show that the devices have improved subthreshold behavior, greatly improved self-gain and improved speed-power product compared with undoped controls.

AB - The operation of laterally-scaled Silicon (Si)/SiGe n-MODFETs with buried in situ and ion-impanted p-well doping was investigated. The layer stuctures were grown by UHV-chemical vapor deposition (CVD) on 8 inch Si wafers and consisted of a Si 0.7Ge 0.3 bottom barrier layer, a Si quantum well, a top undoped Si 0.7Ge 0.3 spacer layer and a Si cap layer. MODFETs utilizing implanted p-wells were characterized using dc I-V measurements at room temperature. Results show that the devices have improved subthreshold behavior, greatly improved self-gain and improved speed-power product compared with undoped controls.

UR - https://www.scopus.com/pages/publications/18044394376

UR - https://www.scopus.com/pages/publications/18044394376#tab=citedBy

U2 - 10.1109/DRC.2004.1367806

DO - 10.1109/DRC.2004.1367806

M3 - Conference contribution

AN - SCOPUS:18044394376

SN - 0780382846

T3 - Device Research Conference - Conference Digest, DRC

SP - 107

EP - 108

BT - Device Research Conference - Conference Digest, 62nd DRC

T2 - Device Research Conference - Conference Digest, 62nd DRC

Y2 - 21 June 2004 through 23 June 2004

ER -

Laterally-scaled Si/SiGe n-MODFETs with in situ and ion-implanted p-well doping

Abstract

Publication series

Other

UN SDGs

Publisher link

Find It

Other files and links

Fingerprint

Cite this