Laterally-scaled Si/SiGe n-MODFETs with in situ and ion-implanted p-well doping

S. J. Koester; K. L. Saenger; J. O. Chu; Q. C. Ouyang; J. A. Ott; D. F. Canaperi; J. A. Tornello; C. V. Jahnes; S. E. Steen

doi:10.1109/DRC.2004.1367806

Laterally-scaled Si/SiGe n-MODFETs with in situ and ion-implanted p-well doping

S. J. Koester, K. L. Saenger, J. O. Chu, Q. C. Ouyang, J. A. Ott, D. F. Canaperi, J. A. Tornello, C. V. Jahnes, S. E. Steen

Electrical and Computer Engineering

Research output: Chapter in Book/Report/Conference proceeding › Conference contribution

4 Scopus citations

Abstract

The operation of laterally-scaled Silicon (Si)/SiGe n-MODFETs with buried in situ and ion-impanted p-well doping was investigated. The layer stuctures were grown by UHV-chemical vapor deposition (CVD) on 8 inch Si wafers and consisted of a Si _0.7Ge _0.3 bottom barrier layer, a Si quantum well, a top undoped Si _0.7Ge _0.3 spacer layer and a Si cap layer. MODFETs utilizing implanted p-wells were characterized using dc I-V measurements at room temperature. Results show that the devices have improved subthreshold behavior, greatly improved self-gain and improved speed-power product compared with undoped controls.

Original language	English (US)
Title of host publication	Device Research Conference - Conference Digest, 62nd DRC
Pages	107-108
Number of pages	2
DOIs	https://doi.org/10.1109/DRC.2004.1367806
State	Published - Dec 1 2004
Event	Device Research Conference - Conference Digest, 62nd DRC - Notre Dame, IN, United States Duration: Jun 21 2004 → Jun 23 2004

Publication series

Name	Device Research Conference - Conference Digest, DRC
ISSN (Print)	1548-3770

Other

Other	Device Research Conference - Conference Digest, 62nd DRC
Country/Territory	United States
City	Notre Dame, IN
Period	6/21/04 → 6/23/04

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This output contributes to the following UN Sustainable Development Goals (SDGs)

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10.1109/DRC.2004.1367806

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Koester, S. J., Saenger, K. L., Chu, J. O., Ouyang, Q. C., Ott, J. A., Canaperi, D. F., Tornello, J. A., Jahnes, C. V., & Steen, S. E. (2004). Laterally-scaled Si/SiGe n-MODFETs with in situ and ion-implanted p-well doping. In Device Research Conference - Conference Digest, 62nd DRC (pp. 107-108). Article III.-28 (Device Research Conference - Conference Digest, DRC). https://doi.org/10.1109/DRC.2004.1367806

Koester, SJ, Saenger, KL, Chu, JO, Ouyang, QC, Ott, JA, Canaperi, DF, Tornello, JA, Jahnes, CV & Steen, SE 2004, Laterally-scaled Si/SiGe n-MODFETs with in situ and ion-implanted p-well doping. in Device Research Conference - Conference Digest, 62nd DRC., III.-28, Device Research Conference - Conference Digest, DRC, pp. 107-108, Device Research Conference - Conference Digest, 62nd DRC, Notre Dame, IN, United States, 6/21/04. https://doi.org/10.1109/DRC.2004.1367806

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title = "Laterally-scaled Si/SiGe n-MODFETs with in situ and ion-implanted p-well doping",

abstract = "The operation of laterally-scaled Silicon (Si)/SiGe n-MODFETs with buried in situ and ion-impanted p-well doping was investigated. The layer stuctures were grown by UHV-chemical vapor deposition (CVD) on 8 inch Si wafers and consisted of a Si 0.7Ge 0.3 bottom barrier layer, a Si quantum well, a top undoped Si 0.7Ge 0.3 spacer layer and a Si cap layer. MODFETs utilizing implanted p-wells were characterized using dc I-V measurements at room temperature. Results show that the devices have improved subthreshold behavior, greatly improved self-gain and improved speed-power product compared with undoped controls.",

author = "Koester, \{S. J.\} and Saenger, \{K. L.\} and Chu, \{J. O.\} and Ouyang, \{Q. C.\} and Ott, \{J. A.\} and Canaperi, \{D. F.\} and Tornello, \{J. A.\} and Jahnes, \{C. V.\} and Steen, \{S. E.\}",

year = "2004",

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day = "1",

doi = "10.1109/DRC.2004.1367806",

language = "English (US)",

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series = "Device Research Conference - Conference Digest, DRC",

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T1 - Laterally-scaled Si/SiGe n-MODFETs with in situ and ion-implanted p-well doping

AU - Koester, S. J.

AU - Saenger, K. L.

AU - Chu, J. O.

AU - Ouyang, Q. C.

AU - Ott, J. A.

AU - Canaperi, D. F.

AU - Tornello, J. A.

AU - Jahnes, C. V.

AU - Steen, S. E.

PY - 2004/12/1

Y1 - 2004/12/1

N2 - The operation of laterally-scaled Silicon (Si)/SiGe n-MODFETs with buried in situ and ion-impanted p-well doping was investigated. The layer stuctures were grown by UHV-chemical vapor deposition (CVD) on 8 inch Si wafers and consisted of a Si 0.7Ge 0.3 bottom barrier layer, a Si quantum well, a top undoped Si 0.7Ge 0.3 spacer layer and a Si cap layer. MODFETs utilizing implanted p-wells were characterized using dc I-V measurements at room temperature. Results show that the devices have improved subthreshold behavior, greatly improved self-gain and improved speed-power product compared with undoped controls.

AB - The operation of laterally-scaled Silicon (Si)/SiGe n-MODFETs with buried in situ and ion-impanted p-well doping was investigated. The layer stuctures were grown by UHV-chemical vapor deposition (CVD) on 8 inch Si wafers and consisted of a Si 0.7Ge 0.3 bottom barrier layer, a Si quantum well, a top undoped Si 0.7Ge 0.3 spacer layer and a Si cap layer. MODFETs utilizing implanted p-wells were characterized using dc I-V measurements at room temperature. Results show that the devices have improved subthreshold behavior, greatly improved self-gain and improved speed-power product compared with undoped controls.

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T3 - Device Research Conference - Conference Digest, DRC

SP - 107

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BT - Device Research Conference - Conference Digest, 62nd DRC

T2 - Device Research Conference - Conference Digest, 62nd DRC

Y2 - 21 June 2004 through 23 June 2004

ER -

Laterally-scaled Si/SiGe n-MODFETs with in situ and ion-implanted p-well doping

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