Laterally scaled Si-Si0.7Ge0.3 n-MODFETs with fmax > 200 GHz and low operating bias

S. J. Koester, K. L. Saenger, J. O. Chu, Q. C. Ouyang, J. A. Ott, K. A. Jenkins, D. F. Canaperi, J. A. Tornello, C. V. Jahnes, S. E. Steen

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13 Scopus citations

Abstract

We report on the dc and RF characterization of laterally scaled, Si - SiGe n-MODFETs. Devices with gate length, Lg, of 80 nm had fT = 79 Ghz and fmax = 212 Ghz, while devices with Lg = 70 nm had fT as high as 92 Ghz. The MODFETs displayed enhanced fT at reduced drain-to-source voltage, Vds, compared to Si MOSFETs with similar fT at high Vds.

Original languageEnglish (US)
Pages (from-to)178-180
Number of pages3
JournalIEEE Electron Device Letters
Volume26
Issue number3
DOIs
StatePublished - Mar 2005

Bibliographical note

Funding Information:
Manuscript received September 30, 2004; revised December 7, 2004. This work was supported by DARPA under Contract N66001-00-C-8086. The review of this letter was arranged by T. Mizutani. The authors are with the IBM T. J. Watson Research Center, Yorktown Heights, NY 10598 USA (e-mail: [email protected]). Digital Object Identifier 10.1109/LED.2005.843222 Fig. 1. Cross-sectional diagram of the completed Si–SiGe n-MODFET device structure.

Keywords

  • High mobility
  • MODFET
  • Silicon germanium

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