Laterally scaled Si-Si0.7Ge0.3 n-MODFETs with fmax > 200 GHz and low operating bias

S. J. Koester, K. L. Saenger, J. O. Chu, Q. C. Ouyang, J. A. Ott, K. A. Jenkins, D. F. Canaperi, J. A. Tornello, C. V. Jahnes, S. E. Steen

Research output: Contribution to journalArticlepeer-review

13 Scopus citations

Abstract

We report on the dc and RF characterization of laterally scaled, Si - SiGe n-MODFETs. Devices with gate length, Lg, of 80 nm had fT = 79 Ghz and fmax = 212 Ghz, while devices with Lg = 70 nm had fT as high as 92 Ghz. The MODFETs displayed enhanced fT at reduced drain-to-source voltage, Vds, compared to Si MOSFETs with similar fT at high Vds.

Original languageEnglish (US)
Pages (from-to)178-180
Number of pages3
JournalIEEE Electron Device Letters
Volume26
Issue number3
DOIs
StatePublished - Mar 1 2005

Keywords

  • High mobility
  • MODFET
  • Silicon germanium

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