Laterally scaled Si-Si0.7Ge0.3 n-MODFETs with fmax > 200 GHz and low operating bias

S. J. Koester, K. L. Saenger, J. O. Chu, Q. C. Ouyang, J. A. Ott, K. A. Jenkins, D. F. Canaperi, J. A. Tornello, C. V. Jahnes, S. E. Steen

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13 Scopus citations


We report on the dc and RF characterization of laterally scaled, Si - SiGe n-MODFETs. Devices with gate length, Lg, of 80 nm had fT = 79 Ghz and fmax = 212 Ghz, while devices with Lg = 70 nm had fT as high as 92 Ghz. The MODFETs displayed enhanced fT at reduced drain-to-source voltage, Vds, compared to Si MOSFETs with similar fT at high Vds.

Original languageEnglish (US)
Pages (from-to)178-180
Number of pages3
JournalIEEE Electron Device Letters
Issue number3
StatePublished - Mar 1 2005


  • High mobility
  • Silicon germanium

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