Abstract
We report on the dc and RF characterization of laterally scaled, Si - SiGe n-MODFETs. Devices with gate length, Lg, of 80 nm had fT = 79 Ghz and fmax = 212 Ghz, while devices with Lg = 70 nm had fT as high as 92 Ghz. The MODFETs displayed enhanced fT at reduced drain-to-source voltage, Vds, compared to Si MOSFETs with similar fT at high Vds.
Original language | English (US) |
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Pages (from-to) | 178-180 |
Number of pages | 3 |
Journal | IEEE Electron Device Letters |
Volume | 26 |
Issue number | 3 |
DOIs | |
State | Published - Mar 2005 |
Bibliographical note
Funding Information:Manuscript received September 30, 2004; revised December 7, 2004. This work was supported by DARPA under Contract N66001-00-C-8086. The review of this letter was arranged by T. Mizutani. The authors are with the IBM T. J. Watson Research Center, Yorktown Heights, NY 10598 USA (e-mail: [email protected]). Digital Object Identifier 10.1109/LED.2005.843222 Fig. 1. Cross-sectional diagram of the completed Si–SiGe n-MODFET device structure.
Keywords
- High mobility
- MODFET
- Silicon germanium