Lateral spin transport through bulk silicon

Jing Li; Ian Appelbaum

doi:10.1063/1.4704802

Lateral spin transport through bulk silicon

Jing Li, Ian Appelbaum

Research output: Contribution to journal › Article › peer-review

20 Scopus citations

Abstract

Using ballistic hot electron techniques, we demonstrate lateral spin transport through a bulk Si wafer. Despite a wide spin transport time distribution caused by transport path variation in the 400 μm-thick Si channel, the absence of a buried interface in close proximity increases the observed spin lifetime to approximately 100 ns at 61 K. The relative insensitivity of this lifetime to temperature variation (and its absolute magnitude) indicates a contribution from an extrinsic depolarization mechanism such as disorder and defects at the exposed air/Si interface in the transport region between injector and detector.

Original language	English (US)
Article number	162408
Journal	Applied Physics Letters
Volume	100
Issue number	16
DOIs	https://doi.org/10.1063/1.4704802
State	Published - Apr 16 2012
Externally published	Yes

Bibliographical note

Funding Information:
This work was supported by the Office of Naval Research and the National Science Foundation. We acknowledge the support of the Maryland NanoCenter and its FabLab.

Copyright:
Copyright 2012 Elsevier B.V., All rights reserved.

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10.1063/1.4704802

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title = "Lateral spin transport through bulk silicon",

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author = "Jing Li and Ian Appelbaum",

note = "Funding Information: This work was supported by the Office of Naval Research and the National Science Foundation. We acknowledge the support of the Maryland NanoCenter and its FabLab. Copyright: Copyright 2012 Elsevier B.V., All rights reserved.",

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AU - Appelbaum, Ian

N1 - Funding Information: This work was supported by the Office of Naval Research and the National Science Foundation. We acknowledge the support of the Maryland NanoCenter and its FabLab. Copyright: Copyright 2012 Elsevier B.V., All rights reserved.

PY - 2012/4/16

Y1 - 2012/4/16

N2 - Using ballistic hot electron techniques, we demonstrate lateral spin transport through a bulk Si wafer. Despite a wide spin transport time distribution caused by transport path variation in the 400 μm-thick Si channel, the absence of a buried interface in close proximity increases the observed spin lifetime to approximately 100 ns at 61 K. The relative insensitivity of this lifetime to temperature variation (and its absolute magnitude) indicates a contribution from an extrinsic depolarization mechanism such as disorder and defects at the exposed air/Si interface in the transport region between injector and detector.

AB - Using ballistic hot electron techniques, we demonstrate lateral spin transport through a bulk Si wafer. Despite a wide spin transport time distribution caused by transport path variation in the 400 μm-thick Si channel, the absence of a buried interface in close proximity increases the observed spin lifetime to approximately 100 ns at 61 K. The relative insensitivity of this lifetime to temperature variation (and its absolute magnitude) indicates a contribution from an extrinsic depolarization mechanism such as disorder and defects at the exposed air/Si interface in the transport region between injector and detector.

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Lateral spin transport through bulk silicon

Abstract

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