Lateral spin transport through bulk silicon

Jing Li, Ian Appelbaum

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20 Scopus citations


Using ballistic hot electron techniques, we demonstrate lateral spin transport through a bulk Si wafer. Despite a wide spin transport time distribution caused by transport path variation in the 400 μm-thick Si channel, the absence of a buried interface in close proximity increases the observed spin lifetime to approximately 100 ns at 61 K. The relative insensitivity of this lifetime to temperature variation (and its absolute magnitude) indicates a contribution from an extrinsic depolarization mechanism such as disorder and defects at the exposed air/Si interface in the transport region between injector and detector.

Original languageEnglish (US)
Article number162408
JournalApplied Physics Letters
Issue number16
StatePublished - Apr 16 2012

Bibliographical note

Funding Information:
This work was supported by the Office of Naval Research and the National Science Foundation. We acknowledge the support of the Maryland NanoCenter and its FabLab.

Copyright 2012 Elsevier B.V., All rights reserved.


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