The lateral mode thresholds of an external cavity AlGaAs laser diode array are measured as a function of cavity length. It is found that certain cavity lengths induce the array to lase in either the fundamental or highest order lateral mode. The results are explained using the theory of Talbot self-imaging in fractional Talbot planes.
|Original language||English (US)|
|Number of pages||3|
|Journal||Applied Physics Letters|
|State||Published - 1989|
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