Laser-Induced Single-Event Transients in Black Phosphorus MOSFETs

C. Liang, R. Ma, K. Li, Y. Su, H. Gong, K. L. Ryder, P. Wang, A. L. Sternberg, E. X. Zhang, M. L. Alles, R. A. Reed, Steven J Koester, D. M. Fleetwood, R. D. Schrimpf

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4 Scopus citations


Laser-induced single-event transients (SETs) are observed in black phosphorus (BP) MOSFETs. The SETs are relatively small, which is consistent with expectations for thin-film fully depleted transistors. The position dependence and the bias-dependence of the measured SETs in BP transistors are investigated to study the charge collection mechanisms. The peak drain current is maximized when the pulsed-laser strikes at the center of the channel region. The amplitudes of the SETs are also relatively independent of the overdrive voltage. The drain-to-source SET current increases when VDS increases, due to a shunt effect.

Original languageEnglish (US)
Article number8502101
Pages (from-to)384-388
Number of pages5
JournalIEEE Transactions on Nuclear Science
Issue number1
StatePublished - Jan 2019

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  • Black phosphorus (BP)
  • pulsed laser irradiation
  • single-event effects (SEEs)
  • transient characterization


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