Laser-Induced Single-Event Transients in Black Phosphorus MOSFETs

C. Liang, R. Ma, K. Li, Y. Su, H. Gong, K. L. Ryder, P. Wang, A. L. Sternberg, E. X. Zhang, M. L. Alles, R. A. Reed, Steven J Koester, D. M. Fleetwood, R. D. Schrimpf

Research output: Contribution to journalArticlepeer-review

1 Scopus citations

Abstract

Laser-induced single-event transients (SETs) are observed in black phosphorus (BP) MOSFETs. The SETs are relatively small, which is consistent with expectations for thin-film fully depleted transistors. The position dependence and the bias-dependence of the measured SETs in BP transistors are investigated to study the charge collection mechanisms. The peak drain current is maximized when the pulsed-laser strikes at the center of the channel region. The amplitudes of the SETs are also relatively independent of the overdrive voltage. The drain-to-source SET current increases when VDS increases, due to a shunt effect.

Original languageEnglish (US)
Article number8502101
Pages (from-to)384-388
Number of pages5
JournalIEEE Transactions on Nuclear Science
Volume66
Issue number1
DOIs
StatePublished - Jan 2019

Bibliographical note

Funding Information:
Manuscript received July 14, 2018; revised September 22, 2018; accepted October 16, 2018. Date of publication October 22, 2018; date of current version January 17, 2019. This work was supported by the Defense Threat Reduction Agency Basic Research under Award HDTRA1-14-1-0042.

Publisher Copyright:
© 1963-2012 IEEE.

Copyright:
Copyright 2019 Elsevier B.V., All rights reserved.

Keywords

  • Black phosphorus (BP)
  • pulsed laser irradiation
  • single-event effects (SEEs)
  • transient characterization

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