Abstract
We describe pyrolytic laser assisted chemical vapor deposition of Al from dimethylethylamine-alane with 514 nm radiation from an Ar+ laser. Results from deposition on different substrates, including Pt, Au, W, and Si, provide insight into to thermal and nucleation effects in the laser writing process. High purity Al lines with resistivity close to bulk Al are reported for a range of operating conditions. The relationship between operating parameters and the resulting properties of the deposited lines is investigated. We also demonstrate a two-step fast writing process based on fast laser nucleation of lines followed by selective chemical vapor deposition of Al on the nucleated pattern.
| Original language | English (US) |
|---|---|
| Title of host publication | Chemical Perspectives of Microelectronic Materials III |
| Publisher | Publ by Materials Research Society |
| Pages | 173-178 |
| Number of pages | 6 |
| ISBN (Print) | 1558991778 |
| State | Published - Jan 1 1993 |
| Event | Proceedings of the 3rd Biennial Meeting of Chemical Perspectives of Microelectronic Materials - Boston, MA, USA Duration: Nov 30 1992 → Dec 3 1992 |
Publication series
| Name | Materials Research Society Symposium Proceedings |
|---|---|
| Volume | 282 |
| ISSN (Print) | 0272-9172 |
Other
| Other | Proceedings of the 3rd Biennial Meeting of Chemical Perspectives of Microelectronic Materials |
|---|---|
| City | Boston, MA, USA |
| Period | 11/30/92 → 12/3/92 |
Fingerprint
Cite this
Laser assisted CVD aluminum from a novel liquid alane precursor. / Han, Jaesung; Senzaki, Yoshihide; Gladfelter, Wayne L.; Jensen, Klavs F.
Chemical Perspectives of Microelectronic Materials III. Publ by Materials Research Society, 1993. p. 173-178 (Materials Research Society Symposium Proceedings; Vol. 282).Research output: Chapter in Book/Report/Conference proceeding › Conference contribution
}
TY - GEN
T1 - Laser assisted CVD aluminum from a novel liquid alane precursor
AU - Han, Jaesung
AU - Senzaki, Yoshihide
AU - Gladfelter, Wayne L.
AU - Jensen, Klavs F.
PY - 1993/1/1
Y1 - 1993/1/1
N2 - We describe pyrolytic laser assisted chemical vapor deposition of Al from dimethylethylamine-alane with 514 nm radiation from an Ar+ laser. Results from deposition on different substrates, including Pt, Au, W, and Si, provide insight into to thermal and nucleation effects in the laser writing process. High purity Al lines with resistivity close to bulk Al are reported for a range of operating conditions. The relationship between operating parameters and the resulting properties of the deposited lines is investigated. We also demonstrate a two-step fast writing process based on fast laser nucleation of lines followed by selective chemical vapor deposition of Al on the nucleated pattern.
AB - We describe pyrolytic laser assisted chemical vapor deposition of Al from dimethylethylamine-alane with 514 nm radiation from an Ar+ laser. Results from deposition on different substrates, including Pt, Au, W, and Si, provide insight into to thermal and nucleation effects in the laser writing process. High purity Al lines with resistivity close to bulk Al are reported for a range of operating conditions. The relationship between operating parameters and the resulting properties of the deposited lines is investigated. We also demonstrate a two-step fast writing process based on fast laser nucleation of lines followed by selective chemical vapor deposition of Al on the nucleated pattern.
UR - http://www.scopus.com/inward/record.url?scp=0027150757&partnerID=8YFLogxK
UR - http://www.scopus.com/inward/citedby.url?scp=0027150757&partnerID=8YFLogxK
M3 - Conference contribution
AN - SCOPUS:0027150757
SN - 1558991778
T3 - Materials Research Society Symposium Proceedings
SP - 173
EP - 178
BT - Chemical Perspectives of Microelectronic Materials III
PB - Publ by Materials Research Society
ER -