Laser assisted CVD aluminum from a novel liquid alane precursor

Jaesung Han, Yoshihide Senzaki, Wayne L. Gladfelter, Klavs F. Jensen

Research output: Chapter in Book/Report/Conference proceedingConference contribution

2 Citations (Scopus)

Abstract

We describe pyrolytic laser assisted chemical vapor deposition of Al from dimethylethylamine-alane with 514 nm radiation from an Ar+ laser. Results from deposition on different substrates, including Pt, Au, W, and Si, provide insight into to thermal and nucleation effects in the laser writing process. High purity Al lines with resistivity close to bulk Al are reported for a range of operating conditions. The relationship between operating parameters and the resulting properties of the deposited lines is investigated. We also demonstrate a two-step fast writing process based on fast laser nucleation of lines followed by selective chemical vapor deposition of Al on the nucleated pattern.

Original languageEnglish (US)
Title of host publicationChemical Perspectives of Microelectronic Materials III
PublisherPubl by Materials Research Society
Pages173-178
Number of pages6
ISBN (Print)1558991778
StatePublished - Jan 1 1993
EventProceedings of the 3rd Biennial Meeting of Chemical Perspectives of Microelectronic Materials - Boston, MA, USA
Duration: Nov 30 1992Dec 3 1992

Publication series

NameMaterials Research Society Symposium Proceedings
Volume282
ISSN (Print)0272-9172

Other

OtherProceedings of the 3rd Biennial Meeting of Chemical Perspectives of Microelectronic Materials
CityBoston, MA, USA
Period11/30/9212/3/92

Fingerprint

Aluminum
Chemical vapor deposition
Lasers
Liquids
Nucleation
Radiation
Substrates

Cite this

Han, J., Senzaki, Y., Gladfelter, W. L., & Jensen, K. F. (1993). Laser assisted CVD aluminum from a novel liquid alane precursor. In Chemical Perspectives of Microelectronic Materials III (pp. 173-178). (Materials Research Society Symposium Proceedings; Vol. 282). Publ by Materials Research Society.

Laser assisted CVD aluminum from a novel liquid alane precursor. / Han, Jaesung; Senzaki, Yoshihide; Gladfelter, Wayne L.; Jensen, Klavs F.

Chemical Perspectives of Microelectronic Materials III. Publ by Materials Research Society, 1993. p. 173-178 (Materials Research Society Symposium Proceedings; Vol. 282).

Research output: Chapter in Book/Report/Conference proceedingConference contribution

Han, J, Senzaki, Y, Gladfelter, WL & Jensen, KF 1993, Laser assisted CVD aluminum from a novel liquid alane precursor. in Chemical Perspectives of Microelectronic Materials III. Materials Research Society Symposium Proceedings, vol. 282, Publ by Materials Research Society, pp. 173-178, Proceedings of the 3rd Biennial Meeting of Chemical Perspectives of Microelectronic Materials, Boston, MA, USA, 11/30/92.
Han J, Senzaki Y, Gladfelter WL, Jensen KF. Laser assisted CVD aluminum from a novel liquid alane precursor. In Chemical Perspectives of Microelectronic Materials III. Publ by Materials Research Society. 1993. p. 173-178. (Materials Research Society Symposium Proceedings).
Han, Jaesung ; Senzaki, Yoshihide ; Gladfelter, Wayne L. ; Jensen, Klavs F. / Laser assisted CVD aluminum from a novel liquid alane precursor. Chemical Perspectives of Microelectronic Materials III. Publ by Materials Research Society, 1993. pp. 173-178 (Materials Research Society Symposium Proceedings).
@inproceedings{b4b61bf57b3846c791b44ffdf0f57a8a,
title = "Laser assisted CVD aluminum from a novel liquid alane precursor",
abstract = "We describe pyrolytic laser assisted chemical vapor deposition of Al from dimethylethylamine-alane with 514 nm radiation from an Ar+ laser. Results from deposition on different substrates, including Pt, Au, W, and Si, provide insight into to thermal and nucleation effects in the laser writing process. High purity Al lines with resistivity close to bulk Al are reported for a range of operating conditions. The relationship between operating parameters and the resulting properties of the deposited lines is investigated. We also demonstrate a two-step fast writing process based on fast laser nucleation of lines followed by selective chemical vapor deposition of Al on the nucleated pattern.",
author = "Jaesung Han and Yoshihide Senzaki and Gladfelter, {Wayne L.} and Jensen, {Klavs F.}",
year = "1993",
month = "1",
day = "1",
language = "English (US)",
isbn = "1558991778",
series = "Materials Research Society Symposium Proceedings",
publisher = "Publ by Materials Research Society",
pages = "173--178",
booktitle = "Chemical Perspectives of Microelectronic Materials III",

}

TY - GEN

T1 - Laser assisted CVD aluminum from a novel liquid alane precursor

AU - Han, Jaesung

AU - Senzaki, Yoshihide

AU - Gladfelter, Wayne L.

AU - Jensen, Klavs F.

PY - 1993/1/1

Y1 - 1993/1/1

N2 - We describe pyrolytic laser assisted chemical vapor deposition of Al from dimethylethylamine-alane with 514 nm radiation from an Ar+ laser. Results from deposition on different substrates, including Pt, Au, W, and Si, provide insight into to thermal and nucleation effects in the laser writing process. High purity Al lines with resistivity close to bulk Al are reported for a range of operating conditions. The relationship between operating parameters and the resulting properties of the deposited lines is investigated. We also demonstrate a two-step fast writing process based on fast laser nucleation of lines followed by selective chemical vapor deposition of Al on the nucleated pattern.

AB - We describe pyrolytic laser assisted chemical vapor deposition of Al from dimethylethylamine-alane with 514 nm radiation from an Ar+ laser. Results from deposition on different substrates, including Pt, Au, W, and Si, provide insight into to thermal and nucleation effects in the laser writing process. High purity Al lines with resistivity close to bulk Al are reported for a range of operating conditions. The relationship between operating parameters and the resulting properties of the deposited lines is investigated. We also demonstrate a two-step fast writing process based on fast laser nucleation of lines followed by selective chemical vapor deposition of Al on the nucleated pattern.

UR - http://www.scopus.com/inward/record.url?scp=0027150757&partnerID=8YFLogxK

UR - http://www.scopus.com/inward/citedby.url?scp=0027150757&partnerID=8YFLogxK

M3 - Conference contribution

AN - SCOPUS:0027150757

SN - 1558991778

T3 - Materials Research Society Symposium Proceedings

SP - 173

EP - 178

BT - Chemical Perspectives of Microelectronic Materials III

PB - Publ by Materials Research Society

ER -