Larger-than-Vdd Forward Body Bias in Sub-0.5V Nanoscale CMOS

Hari Ananthan, Chris H. Kim, Kaushik Roy

Research output: Chapter in Book/Report/Conference proceedingConference contribution

12 Scopus citations

Abstract

This paper examines the effectiveness of larger-than-V<inf>dd</inf> forward body bias (FBB) in nanoscale bulk CMOS circuits where V<inf>dd</inf> is expected to scale below 0.5V. Equal-to and larger-than V<inf>dd</inf> FBB schemes offer unique advantages over conventional FBB such as simple design overhead and reverse body bias capability respectively. Compared to zero body bias, they improve process-variation immunity and achieve 71% and 78% standby leakage savings at iso performance and iso active power at room temperature. We also suggest a novel temperature-adaptive body bias scheme to control active leakage and achieve 22% and 40% active power savings at higher temperatures.

Original languageEnglish (US)
Title of host publicationProceedings of the International Symposium on Low Power Electronics and Design
PublisherInstitute of Electrical and Electronics Engineers Inc.
Pages8-13
Number of pages6
Volume2004-January
EditionJanuary
ISBN (Print)1581139292
StatePublished - 2004
Event2004 International Symposium on Low Power Electronics and Design, ISLPED 2004 - Newport Beach, United States
Duration: Aug 9 2004Aug 11 2004

Other

Other2004 International Symposium on Low Power Electronics and Design, ISLPED 2004
CountryUnited States
CityNewport Beach
Period8/9/048/11/04

Keywords

  • Forward Body Bias
  • Junction Leakage
  • Process Variations
  • Sub-threshold Leakage

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