Abstract
The unidirectional spin Hall and Rashba-Edelstein magnetoresistance is of great fundamental and practical interest, particularly in the context of reading magnetization states in two-terminal spin-orbit torque memory and logic devices due to its unique symmetry. Here, we report large unidirectional spin Hall and Rashba-Edelstein magnetoresistance in a new material family - magnetic insulator/topological insulator Y3Fe5O12/Bi2Se3 bilayers. Such heterostructures exhibit a unidirectional spin Hall and Rashba-Edelstein magnetoresistance that is about an order of magnitude larger than the highest values reported so far in all-metal Ta/Co bilayers. The polarized neutron reflectometry reveals a unique temperature-dependent magnetic intermediary layer at the magnetic insulator-substrate interface and a proximity layer at the magnetic insulator-topological insulator interface. These polarized neutron reflectometry findings echo the magnetoresistance results in a comprehensive physics picture. Finally, we demonstrate a prototype memory device based on a magnetic insulator/topological insulator bilayer, using unidirectional spin Hall and Rashba-Edelstein magnetoresistance for electrical readout of current-induced magnetization switching aided by a small Oersted field.
Original language | English (US) |
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Article number | 011406 |
Journal | Applied Physics Reviews |
Volume | 9 |
Issue number | 1 |
DOIs | |
State | Published - Mar 1 2022 |
Bibliographical note
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