Large-scale interlayer rotations and Te grain boundaries in (Bi,Sb)2Te3 thin films

Danielle Reifsnyder Hickey; Ryan J. Wu; Joon Sue Lee; Javad G. Azadani; Roberto Grassi; Mahendra Dc; Jian Ping Wang; Tony Low; Nitin Samarth; K. Andre Mkhoyan

doi:10.1103/PhysRevMaterials.4.011201

Large-scale interlayer rotations and Te grain boundaries in (Bi,Sb)2Te3 thin films

Danielle Reifsnyder Hickey, Ryan J. Wu, Joon Sue Lee, Javad G. Azadani, Roberto Grassi, Mahendra Dc, Jian Ping Wang, Tony Low, Nitin Samarth, K. Andre Mkhoyan

Research output: Contribution to journal › Article › peer-review

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Abstract

We report the observation of two distinct large-scale defects in (Bi,Sb)2Te3 topological insulator (TI) thin films grown by molecular beam epitaxy. Small-angle rotations are detected between quintuple layers of the TI film, extending throughout a grain and beyond, and nm-sized Te formations are discovered that extend along grain boundaries. Density functional theory calculations suggest that the rotational defects can affect the local band structure of the film while preserving spin-momentum locking in the Dirac bands, and that the Te nanostructures at grain boundaries can result in wider-band-gap regions between the grains.

Original language	English (US)
Article number	011201
Journal	Physical Review Materials
Volume	4
Issue number	1
DOIs	https://doi.org/10.1103/PhysRevMaterials.4.011201
State	Published - Jan 15 2020

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title = "Large-scale interlayer rotations and Te grain boundaries in (Bi,Sb)2Te3 thin films",

abstract = "We report the observation of two distinct large-scale defects in (Bi,Sb)2Te3 topological insulator (TI) thin films grown by molecular beam epitaxy. Small-angle rotations are detected between quintuple layers of the TI film, extending throughout a grain and beyond, and nm-sized Te formations are discovered that extend along grain boundaries. Density functional theory calculations suggest that the rotational defects can affect the local band structure of the film while preserving spin-momentum locking in the Dirac bands, and that the Te nanostructures at grain boundaries can result in wider-band-gap regions between the grains.",

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T1 - Large-scale interlayer rotations and Te grain boundaries in (Bi,Sb)2Te3 thin films

AU - Reifsnyder Hickey, Danielle

AU - Wu, Ryan J.

AU - Lee, Joon Sue

AU - Azadani, Javad G.

AU - Grassi, Roberto

AU - Dc, Mahendra

AU - Wang, Jian Ping

AU - Low, Tony

AU - Samarth, Nitin

AU - Mkhoyan, K. Andre

PY - 2020/1/15

Y1 - 2020/1/15

N2 - We report the observation of two distinct large-scale defects in (Bi,Sb)2Te3 topological insulator (TI) thin films grown by molecular beam epitaxy. Small-angle rotations are detected between quintuple layers of the TI film, extending throughout a grain and beyond, and nm-sized Te formations are discovered that extend along grain boundaries. Density functional theory calculations suggest that the rotational defects can affect the local band structure of the film while preserving spin-momentum locking in the Dirac bands, and that the Te nanostructures at grain boundaries can result in wider-band-gap regions between the grains.

AB - We report the observation of two distinct large-scale defects in (Bi,Sb)2Te3 topological insulator (TI) thin films grown by molecular beam epitaxy. Small-angle rotations are detected between quintuple layers of the TI film, extending throughout a grain and beyond, and nm-sized Te formations are discovered that extend along grain boundaries. Density functional theory calculations suggest that the rotational defects can affect the local band structure of the film while preserving spin-momentum locking in the Dirac bands, and that the Te nanostructures at grain boundaries can result in wider-band-gap regions between the grains.

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Large-scale interlayer rotations and Te grain boundaries in (Bi,Sb)2Te3 thin films

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