Large-area, low-voltage, antiambipolar heterojunctions from solution-processed semiconductors

Deep Jariwala, Vinod K. Sangwan, Jung Woo Ted Seo, Weichao Xu, Jeremy Smith, Chris H. Kim, Lincoln J. Lauhon, Tobin J. Marks, Mark C. Hersam

Research output: Contribution to journalArticlepeer-review

88 Scopus citations


The emergence of semiconducting materials with inert or dangling bond-free surfaces has created opportunities to form van der Waals heterostructures without the constraints of traditional epitaxial growth. For example, layered two-dimensional (2D) semiconductors have been incorporated into heterostructure devices with gate-tunable electronic and optical functionalities. However, 2D materials present processing challenges that have prevented these heterostructures from being produced with sufficient scalability and/or homogeneity to enable their incorporation into large-area integrated circuits. Here, we extend the concept of van der Waals heterojunctions to semiconducting p-type single-walled carbon nanotube (s-SWCNT) and n-type amorphous indium gallium zinc oxide (a-IGZO) thin films that can be solution-processed or sputtered with high spatial uniformity at the wafer scale. The resulting large-area, low-voltage p-n heterojunctions exhibit antiambipolar transfer characteristics with high on/off ratios that are well-suited for electronic, optoelectronic, and telecommunication technologies.

Original languageEnglish (US)
Pages (from-to)416-421
Number of pages6
JournalNano letters
Issue number1
StatePublished - Jan 14 2015

Bibliographical note

Publisher Copyright:
© 2014 American Chemical Society.


  • carbon nanotube
  • frequency doubler
  • indium gallium zinc oxide
  • p-n heterojunction
  • phase shift keying
  • van der Waals heterostructure


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