L10 FePd-based perpendicular magnetic tunnel junctions with 65% tunnel magnetoresistance and ultralow switching current density

Deyuan Lyu, Jenae E. Shoup, Ali T. Habiboglu, Qi Jia, Pravin Khanal, Brandon R. Zink, Yang Lv, Bowei Zhou, Daniel B. Gopman, Weigang Wang, Jian Ping Wang

Research output: Contribution to journalArticlepeer-review

Abstract

L10 FePd is increasingly recognized as a potential candidate for magnetic tunnel junctions (MTJs), yet there remains room for enhancing device performance. In this work, we fabricated fully-integrated L10 FePd-based perpendicular MTJ devices and achieved a significant increase in tunnel magnetoresistance, reaching ∼65%, compared to the previous record of 25%. Notably, we observed bi-directional switching with a low switching current density of about 1.4 × 105 A/cm2, which outperforms the typical spin-transfer torque (STT) MTJ by about one order of magnitude. We propose two possible mechanisms to elucidate the switching process and associated device performance: (1) The voltage-controlled exchange coupling-driven switching of the bottom CoFeB layer; (2) The STT-driven switching of the exchange-coupled L10 FePd-CoFeB composite. While additional research is necessary, these findings may further advance the integration of L10 FePd into spintronic devices, potentially enabling low-energy memory and logic technologies.

Original languageEnglish (US)
Article number025019
JournalAIP Advances
Volume14
Issue number2
DOIs
StatePublished - Feb 1 2024

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