L10 Fe-Pd Synthetic Antiferromagnet through an fcc Ru Spacer Utilized for Perpendicular Magnetic Tunnel Junctions

De Lin Zhang; Congli Sun; Yang Lv; Karl B. Schliep; Zhengyang Zhao; Jun Yang Chen; Paul M. Voyles; Jian Ping Wang

doi:10.1103/PhysRevApplied.9.044028

L10 Fe-Pd Synthetic Antiferromagnet through an fcc Ru Spacer Utilized for Perpendicular Magnetic Tunnel Junctions

De Lin Zhang, Congli Sun, Yang Lv, Karl B. Schliep, Zhengyang Zhao, Jun Yang Chen, Paul M. Voyles, Jian Ping Wang

Research output: Contribution to journal › Article › peer-review

22 Scopus citations

Abstract

Magnetic materials that possess large bulk perpendicular magnetic anisotropy (PMA) are essential for the development of magnetic tunnel junctions (MTJs) used in future spintronic memory and logic devices. The addition of an antiferromagnetic layer to these MTJs was recently predicted to facilitate ultrafast magnetization switching. Here, we report a demonstration of a bulk perpendicular synthetic antiferromagnetic (PSAFM) structure comprised of a (001) textured Fe-Pd/Ru/Fe-Pd trilayer with a face-centered-cubic (fcc) phase Ru spacer. The L10 Fe-Pd PSAFM structure shows a large bulk PMA (Ku∼10.2 Merg/cm3) and strong antiferromagnetic coupling (-JIEC∼2.60 erg/cm2). Full perpendicular magnetic tunnel junctions (PMTJs) with a L10 Fe-Pd PSAFM layer are then fabricated. Tunneling magnetoresistance ratios of up to approximately 25% (approximately 60%) are observed at room temperature (5 K) after postannealing at 350 °C. Exhibiting high thermal stabilities and large Ku, the bulk PMTJs with an L10 Fe-Pd PSAFM layer could pave a way for next-generation ultrahigh-density and ultralow-energy spintronic applications.

Original language	English (US)
Article number	044028
Journal	Physical Review Applied
Volume	9
Issue number	4
DOIs	https://doi.org/10.1103/PhysRevApplied.9.044028
State	Published - Apr 19 2018

Bibliographical note

Funding Information:
This work is supported by C-SPIN, one of six centers of STARnet, a Semiconductor Research Corporation program sponsored by MARCO and DARPA, and by the NSF (Grant No.ECCS-1310338).

Funding Information:
This work is supported by C-SPIN, one of six centers of STARnet, a Semiconductor Research Corporation program sponsored by MARCO and DARPA, and by the NSF (Grant No. ECCS-1310338). J.-P. W. also thanks the Robert F. Hartmann Endowed Chair Professorship of Electrical Engineering. We would like to thank Mr. Timothy Peterson for his help on the usage of the PPMS and Mr. Patrick Quarterman and Professor Bin Ma from University of Minnesota for useful discussion.

Publisher Copyright:
© 2018 American Physical Society.

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10.1103/PhysRevApplied.9.044028

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title = "L10 Fe-Pd Synthetic Antiferromagnet through an fcc Ru Spacer Utilized for Perpendicular Magnetic Tunnel Junctions",

abstract = "Magnetic materials that possess large bulk perpendicular magnetic anisotropy (PMA) are essential for the development of magnetic tunnel junctions (MTJs) used in future spintronic memory and logic devices. The addition of an antiferromagnetic layer to these MTJs was recently predicted to facilitate ultrafast magnetization switching. Here, we report a demonstration of a bulk perpendicular synthetic antiferromagnetic (PSAFM) structure comprised of a (001) textured Fe-Pd/Ru/Fe-Pd trilayer with a face-centered-cubic (fcc) phase Ru spacer. The L10 Fe-Pd PSAFM structure shows a large bulk PMA (Ku∼10.2 Merg/cm3) and strong antiferromagnetic coupling (-JIEC∼2.60 erg/cm2). Full perpendicular magnetic tunnel junctions (PMTJs) with a L10 Fe-Pd PSAFM layer are then fabricated. Tunneling magnetoresistance ratios of up to approximately 25% (approximately 60%) are observed at room temperature (5 K) after postannealing at 350 °C. Exhibiting high thermal stabilities and large Ku, the bulk PMTJs with an L10 Fe-Pd PSAFM layer could pave a way for next-generation ultrahigh-density and ultralow-energy spintronic applications.",

author = "Zhang, {De Lin} and Congli Sun and Yang Lv and Schliep, {Karl B.} and Zhengyang Zhao and Chen, {Jun Yang} and Voyles, {Paul M.} and Wang, {Jian Ping}",

note = "Funding Information: This work is supported by C-SPIN, one of six centers of STARnet, a Semiconductor Research Corporation program sponsored by MARCO and DARPA, and by the NSF (Grant No.ECCS-1310338). Funding Information: This work is supported by C-SPIN, one of six centers of STARnet, a Semiconductor Research Corporation program sponsored by MARCO and DARPA, and by the NSF (Grant No. ECCS-1310338). J.-P. W. also thanks the Robert F. Hartmann Endowed Chair Professorship of Electrical Engineering. We would like to thank Mr. Timothy Peterson for his help on the usage of the PPMS and Mr. Patrick Quarterman and Professor Bin Ma from University of Minnesota for useful discussion. Publisher Copyright: {\textcopyright} 2018 American Physical Society.",

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AU - Chen, Jun Yang

AU - Voyles, Paul M.

AU - Wang, Jian Ping

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N2 - Magnetic materials that possess large bulk perpendicular magnetic anisotropy (PMA) are essential for the development of magnetic tunnel junctions (MTJs) used in future spintronic memory and logic devices. The addition of an antiferromagnetic layer to these MTJs was recently predicted to facilitate ultrafast magnetization switching. Here, we report a demonstration of a bulk perpendicular synthetic antiferromagnetic (PSAFM) structure comprised of a (001) textured Fe-Pd/Ru/Fe-Pd trilayer with a face-centered-cubic (fcc) phase Ru spacer. The L10 Fe-Pd PSAFM structure shows a large bulk PMA (Ku∼10.2 Merg/cm3) and strong antiferromagnetic coupling (-JIEC∼2.60 erg/cm2). Full perpendicular magnetic tunnel junctions (PMTJs) with a L10 Fe-Pd PSAFM layer are then fabricated. Tunneling magnetoresistance ratios of up to approximately 25% (approximately 60%) are observed at room temperature (5 K) after postannealing at 350 °C. Exhibiting high thermal stabilities and large Ku, the bulk PMTJs with an L10 Fe-Pd PSAFM layer could pave a way for next-generation ultrahigh-density and ultralow-energy spintronic applications.

AB - Magnetic materials that possess large bulk perpendicular magnetic anisotropy (PMA) are essential for the development of magnetic tunnel junctions (MTJs) used in future spintronic memory and logic devices. The addition of an antiferromagnetic layer to these MTJs was recently predicted to facilitate ultrafast magnetization switching. Here, we report a demonstration of a bulk perpendicular synthetic antiferromagnetic (PSAFM) structure comprised of a (001) textured Fe-Pd/Ru/Fe-Pd trilayer with a face-centered-cubic (fcc) phase Ru spacer. The L10 Fe-Pd PSAFM structure shows a large bulk PMA (Ku∼10.2 Merg/cm3) and strong antiferromagnetic coupling (-JIEC∼2.60 erg/cm2). Full perpendicular magnetic tunnel junctions (PMTJs) with a L10 Fe-Pd PSAFM layer are then fabricated. Tunneling magnetoresistance ratios of up to approximately 25% (approximately 60%) are observed at room temperature (5 K) after postannealing at 350 °C. Exhibiting high thermal stabilities and large Ku, the bulk PMTJs with an L10 Fe-Pd PSAFM layer could pave a way for next-generation ultrahigh-density and ultralow-energy spintronic applications.

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L10 Fe-Pd Synthetic Antiferromagnet through an fcc Ru Spacer Utilized for Perpendicular Magnetic Tunnel Junctions

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