Kinetic modeling of the charging of nonconducting walls in a low pressure radio frequency inductively coupled plasma

Research output: Contribution to journalArticlepeer-review

9 Scopus citations

Abstract

This article investigates the overall charging of a nonconducting, plane wall (for instance a wafer) in a low pressure inductively coupled plasma. The problem is addressed using a two-dimensional kinetic model for a low pressure inductive discharge. Comparisons to experimental results show good agreement with the charging profiles predicted by the model. It is pointed out that the surface charge profile on a nonconducting wall is determined by the plasma homogeneity and the high energy part of the electron distribution function. An interpretation of the radial profiles of the sheath potential drop and of the surface charge potential in terms of the differential temperature of the electron distribution function in different energy ranges is presented.

Original languageEnglish (US)
Pages (from-to)300-305
Number of pages6
JournalJournal of Vacuum Science and Technology A: Vacuum, Surfaces and Films
Volume16
Issue number1
DOIs
StatePublished - Jan 1 1998

Fingerprint Dive into the research topics of 'Kinetic modeling of the charging of nonconducting walls in a low pressure radio frequency inductively coupled plasma'. Together they form a unique fingerprint.

Cite this