This article investigates the overall charging of a nonconducting, plane wall (for instance a wafer) in a low pressure inductively coupled plasma. The problem is addressed using a two-dimensional kinetic model for a low pressure inductive discharge. Comparisons to experimental results show good agreement with the charging profiles predicted by the model. It is pointed out that the surface charge profile on a nonconducting wall is determined by the plasma homogeneity and the high energy part of the electron distribution function. An interpretation of the radial profiles of the sheath potential drop and of the surface charge potential in terms of the differential temperature of the electron distribution function in different energy ranges is presented.
|Original language||English (US)|
|Number of pages||6|
|Journal||Journal of Vacuum Science and Technology A: Vacuum, Surfaces and Films|
|State||Published - Jan 1 1998|