ION-Sensitive field effect transistor sensors using suspended graphene nanoribbon patterned by shrink lithography

B. Zhang; T. Cui

doi:10.31438/trf.hh2012.54

ION-Sensitive field effect transistor sensors using suspended graphene nanoribbon patterned by shrink lithography

B. Zhang, T. Cui

Mechanical Engineering

Research output: Chapter in Book/Report/Conference proceeding › Conference contribution

Abstract

Low-cost and facile shrink lithography derived graphene nanoribbon (GNR) was suspended on the channel to form an ion-sensitive field effect transistor (ISFET), and its pH sensing application is presented. By combining a thermoplastic film with a molding process, GNR patterns 50 nm wide were achieved in a low-cost and simple way. Ambipolar characteristics of annealed suspended GNR ISFET present an enhanced ambipolar effect. In comparison, unsuspended GNR and microscale graphene sheets based ISFETs were characterized under the same design, fabrication, and measurement conditions, showing that the suspended GNR ISFET is superior in sensitivity and detection limits.

Original language	English (US)
Title of host publication	2012 Solid-State Sensors, Actuators and Microsystems Workshop, Hilton Head 2012
Editors	Mehran Mehregany, David J. Monk
Publisher	Transducer Research Foundation
Pages	205-208
Number of pages	4
ISBN (Electronic)	9780964002494
DOIs	https://doi.org/10.31438/trf.hh2012.54
State	Published - 2012
Event	2012 Solid-State Sensors, Actuators and Microsystems Workshop, Hilton Head 2012 - Hilton Head, United States Duration: Jun 3 2012 → Jun 7 2012

Publication series

Name	Technical Digest - Solid-State Sensors, Actuators, and Microsystems Workshop

Other

Other	2012 Solid-State Sensors, Actuators and Microsystems Workshop, Hilton Head 2012
Country/Territory	United States
City	Hilton Head
Period	6/3/12 → 6/7/12

Bibliographical note

Publisher Copyright:
© 2012 TRF.

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10.31438/trf.hh2012.54

Cite this

Zhang, B., & Cui, T. (2012). ION-Sensitive field effect transistor sensors using suspended graphene nanoribbon patterned by shrink lithography. In M. Mehregany, & D. J. Monk (Eds.), 2012 Solid-State Sensors, Actuators and Microsystems Workshop, Hilton Head 2012 (pp. 205-208). (Technical Digest - Solid-State Sensors, Actuators, and Microsystems Workshop). Transducer Research Foundation. https://doi.org/10.31438/trf.hh2012.54

ION-Sensitive field effect transistor sensors using suspended graphene nanoribbon patterned by shrink lithography. / Zhang, B.; Cui, T.

2012 Solid-State Sensors, Actuators and Microsystems Workshop, Hilton Head 2012. ed. / Mehran Mehregany; David J. Monk. Transducer Research Foundation, 2012. p. 205-208 (Technical Digest - Solid-State Sensors, Actuators, and Microsystems Workshop).

Research output: Chapter in Book/Report/Conference proceeding › Conference contribution

Zhang, B & Cui, T 2012, ION-Sensitive field effect transistor sensors using suspended graphene nanoribbon patterned by shrink lithography. in M Mehregany & DJ Monk (eds), 2012 Solid-State Sensors, Actuators and Microsystems Workshop, Hilton Head 2012. Technical Digest - Solid-State Sensors, Actuators, and Microsystems Workshop, Transducer Research Foundation, pp. 205-208, 2012 Solid-State Sensors, Actuators and Microsystems Workshop, Hilton Head 2012, Hilton Head, United States, 6/3/12. https://doi.org/10.31438/trf.hh2012.54

Zhang B, Cui T. ION-Sensitive field effect transistor sensors using suspended graphene nanoribbon patterned by shrink lithography. In Mehregany M, Monk DJ, editors, 2012 Solid-State Sensors, Actuators and Microsystems Workshop, Hilton Head 2012. Transducer Research Foundation. 2012. p. 205-208. (Technical Digest - Solid-State Sensors, Actuators, and Microsystems Workshop). https://doi.org/10.31438/trf.hh2012.54

Zhang, B. ; Cui, T. / ION-Sensitive field effect transistor sensors using suspended graphene nanoribbon patterned by shrink lithography. 2012 Solid-State Sensors, Actuators and Microsystems Workshop, Hilton Head 2012. editor / Mehran Mehregany ; David J. Monk. Transducer Research Foundation, 2012. pp. 205-208 (Technical Digest - Solid-State Sensors, Actuators, and Microsystems Workshop).

@inproceedings{7ea44cf54059426b8e4b1c41fa94c8a6,

title = "ION-Sensitive field effect transistor sensors using suspended graphene nanoribbon patterned by shrink lithography",

abstract = "Low-cost and facile shrink lithography derived graphene nanoribbon (GNR) was suspended on the channel to form an ion-sensitive field effect transistor (ISFET), and its pH sensing application is presented. By combining a thermoplastic film with a molding process, GNR patterns 50 nm wide were achieved in a low-cost and simple way. Ambipolar characteristics of annealed suspended GNR ISFET present an enhanced ambipolar effect. In comparison, unsuspended GNR and microscale graphene sheets based ISFETs were characterized under the same design, fabrication, and measurement conditions, showing that the suspended GNR ISFET is superior in sensitivity and detection limits.",

author = "B. Zhang and T. Cui",

note = "Publisher Copyright: {\textcopyright} 2012 TRF.; 2012 Solid-State Sensors, Actuators and Microsystems Workshop, Hilton Head 2012 ; Conference date: 03-06-2012 Through 07-06-2012",

year = "2012",

doi = "10.31438/trf.hh2012.54",

language = "English (US)",

series = "Technical Digest - Solid-State Sensors, Actuators, and Microsystems Workshop",

publisher = "Transducer Research Foundation",

pages = "205--208",

editor = "Mehran Mehregany and Monk, {David J.}",

booktitle = "2012 Solid-State Sensors, Actuators and Microsystems Workshop, Hilton Head 2012",

}

TY - GEN

T1 - ION-Sensitive field effect transistor sensors using suspended graphene nanoribbon patterned by shrink lithography

AU - Zhang, B.

AU - Cui, T.

PY - 2012

Y1 - 2012

N2 - Low-cost and facile shrink lithography derived graphene nanoribbon (GNR) was suspended on the channel to form an ion-sensitive field effect transistor (ISFET), and its pH sensing application is presented. By combining a thermoplastic film with a molding process, GNR patterns 50 nm wide were achieved in a low-cost and simple way. Ambipolar characteristics of annealed suspended GNR ISFET present an enhanced ambipolar effect. In comparison, unsuspended GNR and microscale graphene sheets based ISFETs were characterized under the same design, fabrication, and measurement conditions, showing that the suspended GNR ISFET is superior in sensitivity and detection limits.

AB - Low-cost and facile shrink lithography derived graphene nanoribbon (GNR) was suspended on the channel to form an ion-sensitive field effect transistor (ISFET), and its pH sensing application is presented. By combining a thermoplastic film with a molding process, GNR patterns 50 nm wide were achieved in a low-cost and simple way. Ambipolar characteristics of annealed suspended GNR ISFET present an enhanced ambipolar effect. In comparison, unsuspended GNR and microscale graphene sheets based ISFETs were characterized under the same design, fabrication, and measurement conditions, showing that the suspended GNR ISFET is superior in sensitivity and detection limits.

UR - http://www.scopus.com/inward/record.url?scp=84944678064&partnerID=8YFLogxK

UR - http://www.scopus.com/inward/citedby.url?scp=84944678064&partnerID=8YFLogxK

U2 - 10.31438/trf.hh2012.54

DO - 10.31438/trf.hh2012.54

M3 - Conference contribution

AN - SCOPUS:84944678064

T3 - Technical Digest - Solid-State Sensors, Actuators, and Microsystems Workshop

SP - 205

EP - 208

BT - 2012 Solid-State Sensors, Actuators and Microsystems Workshop, Hilton Head 2012

A2 - Mehregany, Mehran

A2 - Monk, David J.

PB - Transducer Research Foundation

T2 - 2012 Solid-State Sensors, Actuators and Microsystems Workshop, Hilton Head 2012

Y2 - 3 June 2012 through 7 June 2012

ER -

ION-Sensitive field effect transistor sensors using suspended graphene nanoribbon patterned by shrink lithography

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