Abstract
We have fabricated polymer semiconductor thin-film transistors using an ion gel (ionic liquid plus triblock copolymer) as the gate dielectric layer. The gate capacitance of the ion gel can be as large as 40 μF/cm2 at 10 Hz and 2 μF/cm2 at 1 kHz. In addition, the polarization response time of the ion gel is much faster than previously tested solid polymer electrolytes, allowing the ion gel gated transistors to operate at higher frequencies (>100 Hz).
| Original language | English (US) |
|---|---|
| Pages (from-to) | 4532-4533 |
| Number of pages | 2 |
| Journal | Journal of the American Chemical Society |
| Volume | 129 |
| Issue number | 15 |
| DOIs | |
| State | Published - Apr 18 2007 |