Ion gel gated polymer thin-film transistors

Jiyoul Lee, Matthew J. Panzer, Yiyong He, Timothy P. Lodge, C. Daniel Frisbie

Research output: Contribution to journalArticlepeer-review

395 Scopus citations


We have fabricated polymer semiconductor thin-film transistors using an ion gel (ionic liquid plus triblock copolymer) as the gate dielectric layer. The gate capacitance of the ion gel can be as large as 40 μF/cm2 at 10 Hz and 2 μF/cm2 at 1 kHz. In addition, the polarization response time of the ion gel is much faster than previously tested solid polymer electrolytes, allowing the ion gel gated transistors to operate at higher frequencies (>100 Hz).

Original languageEnglish (US)
Pages (from-to)4532-4533
Number of pages2
JournalJournal of the American Chemical Society
Issue number15
StatePublished - Apr 18 2007


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