Investigation on the electrical properties of superlattice FETs using a non-parabolic band model

P. Maiorano; E. Gnani; R. Grassi; A. Gnudi; S. Reggiani; G. Baccarani

doi:10.1016/j.sse.2014.04.010

Investigation on the electrical properties of superlattice FETs using a non-parabolic band model

P. Maiorano
, E. Gnani
, R. Grassi
, A. Gnudi
, S. Reggiani
, G. Baccarani

Electrical and Computer Engineering

Research output: Contribution to journal › Article › peer-review

3 Scopus citations

Abstract

The effect of non-parabolic energy-bands on the electrical properties of an In_0.53Ga_0.47As/In_0.52Al_0.48As superlattice FET has been investigated. An energy dependent effective mass was fitted on k · p simulation results and the new band model was implemented into a self-consistent Schrödinger-Poisson solver. This analysis has shown that non-parabolicity effects lead to noticeable changes of the device characteristics with respect the parabolic band model, namely: an increase of the on-state current and a steeper transition from the off- to the on-state sustained across several decades of current, at the expense of an increased off-state leakage. Moreover, the larger density of states in the non-parabolic model causes a 47% growth of the output conductance at low V_DS, as well as an increased drain conductance in saturation.

Original language	English (US)
Pages (from-to)	45-49
Number of pages	5
Journal	Solid-State Electronics
Volume	98
DOIs	https://doi.org/10.1016/j.sse.2014.04.010
State	Published - Aug 2014

Keywords

Nanowire field-effect transistor (NW-FET)
Non-parabolicity effects
Supelattice-based NW-FET
k · p Band structures

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10.1016/j.sse.2014.04.010

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title = "Investigation on the electrical properties of superlattice FETs using a non-parabolic band model",

abstract = "The effect of non-parabolic energy-bands on the electrical properties of an In0.53Ga0.47As/In0.52Al0.48As superlattice FET has been investigated. An energy dependent effective mass was fitted on k · p simulation results and the new band model was implemented into a self-consistent Schr{\"o}dinger-Poisson solver. This analysis has shown that non-parabolicity effects lead to noticeable changes of the device characteristics with respect the parabolic band model, namely: an increase of the on-state current and a steeper transition from the off- to the on-state sustained across several decades of current, at the expense of an increased off-state leakage. Moreover, the larger density of states in the non-parabolic model causes a 47\% growth of the output conductance at low VDS, as well as an increased drain conductance in saturation.",

keywords = "Nanowire field-effect transistor (NW-FET), Non-parabolicity effects, Supelattice-based NW-FET, k · p Band structures",

author = "P. Maiorano and E. Gnani and R. Grassi and A. Gnudi and S. Reggiani and G. Baccarani",

year = "2014",

month = aug,

doi = "10.1016/j.sse.2014.04.010",

language = "English (US)",

volume = "98",

pages = "45--49",

journal = "Solid-State Electronics",

issn = "0038-1101",

publisher = "Elsevier Ltd",

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TY - JOUR

T1 - Investigation on the electrical properties of superlattice FETs using a non-parabolic band model

AU - Maiorano, P.

AU - Gnani, E.

AU - Grassi, R.

AU - Gnudi, A.

AU - Reggiani, S.

AU - Baccarani, G.

PY - 2014/8

Y1 - 2014/8

N2 - The effect of non-parabolic energy-bands on the electrical properties of an In0.53Ga0.47As/In0.52Al0.48As superlattice FET has been investigated. An energy dependent effective mass was fitted on k · p simulation results and the new band model was implemented into a self-consistent Schrödinger-Poisson solver. This analysis has shown that non-parabolicity effects lead to noticeable changes of the device characteristics with respect the parabolic band model, namely: an increase of the on-state current and a steeper transition from the off- to the on-state sustained across several decades of current, at the expense of an increased off-state leakage. Moreover, the larger density of states in the non-parabolic model causes a 47% growth of the output conductance at low VDS, as well as an increased drain conductance in saturation.

AB - The effect of non-parabolic energy-bands on the electrical properties of an In0.53Ga0.47As/In0.52Al0.48As superlattice FET has been investigated. An energy dependent effective mass was fitted on k · p simulation results and the new band model was implemented into a self-consistent Schrödinger-Poisson solver. This analysis has shown that non-parabolicity effects lead to noticeable changes of the device characteristics with respect the parabolic band model, namely: an increase of the on-state current and a steeper transition from the off- to the on-state sustained across several decades of current, at the expense of an increased off-state leakage. Moreover, the larger density of states in the non-parabolic model causes a 47% growth of the output conductance at low VDS, as well as an increased drain conductance in saturation.

KW - Nanowire field-effect transistor (NW-FET)

KW - Non-parabolicity effects

KW - Supelattice-based NW-FET

KW - k · p Band structures

UR - https://www.scopus.com/pages/publications/84902294770

UR - https://www.scopus.com/pages/publications/84902294770#tab=citedBy

U2 - 10.1016/j.sse.2014.04.010

DO - 10.1016/j.sse.2014.04.010

M3 - Article

AN - SCOPUS:84902294770

SN - 0038-1101

VL - 98

SP - 45

EP - 49

JO - Solid-State Electronics

JF - Solid-State Electronics

ER -

Investigation on the electrical properties of superlattice FETs using a non-parabolic band model

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Keywords

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