Investigation of RF-sputtered Fe-Ta-N thin films

Fulin Wei; Dongping Wu; Daishun Zheng; Bin Ma; Zheng Yang

doi:10.1016/S0921-5107(99)00585-1

Investigation of RF-sputtered Fe-Ta-N thin films

Fulin Wei, Dongping Wu, Daishun Zheng, Bin Ma, Zheng Yang

Research output: Contribution to journal › Article › peer-review

9 Scopus citations

Abstract

The nanocrystallite Fe-Ta-N thin films with high Ta content were prepared by RF reactive sputtering. The dependence of structure and magnetic properties on nitrogen partial pressure P(N₂) and annealing temperature T_an were investigated by XRD, TEM and VSM. It is found that the deposited films in the mixture gas of Ar+N₂ consist of amorphous, after annealing nanocrystallite of α-Fe crystallized from the amorphous. The films are deposited in low nitrogen partial pressure show excellent soft magnetism. It means that controlled crystallization of amorphous is an effective method to prepare nanocrystallite soft magnetic alloy thin films.

Original language	English (US)
Pages (from-to)	156-160
Number of pages	5
Journal	Materials Science and Engineering B: Solid-State Materials for Advanced Technology
Volume	68
Issue number	3
DOIs	https://doi.org/10.1016/S0921-5107(99)00585-1
State	Published - Jan 3 2000
Externally published	Yes

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title = "Investigation of RF-sputtered Fe-Ta-N thin films",

abstract = "The nanocrystallite Fe-Ta-N thin films with high Ta content were prepared by RF reactive sputtering. The dependence of structure and magnetic properties on nitrogen partial pressure P(N2) and annealing temperature Tan were investigated by XRD, TEM and VSM. It is found that the deposited films in the mixture gas of Ar+N2 consist of amorphous, after annealing nanocrystallite of α-Fe crystallized from the amorphous. The films are deposited in low nitrogen partial pressure show excellent soft magnetism. It means that controlled crystallization of amorphous is an effective method to prepare nanocrystallite soft magnetic alloy thin films.",

author = "Fulin Wei and Dongping Wu and Daishun Zheng and Bin Ma and Zheng Yang",

year = "2000",

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doi = "10.1016/S0921-5107(99)00585-1",

language = "English (US)",

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pages = "156--160",

journal = "Materials Science and Engineering B: Solid-State Materials for Advanced Technology",

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T1 - Investigation of RF-sputtered Fe-Ta-N thin films

AU - Wei, Fulin

AU - Wu, Dongping

AU - Zheng, Daishun

AU - Ma, Bin

AU - Yang, Zheng

PY - 2000/1/3

Y1 - 2000/1/3

N2 - The nanocrystallite Fe-Ta-N thin films with high Ta content were prepared by RF reactive sputtering. The dependence of structure and magnetic properties on nitrogen partial pressure P(N2) and annealing temperature Tan were investigated by XRD, TEM and VSM. It is found that the deposited films in the mixture gas of Ar+N2 consist of amorphous, after annealing nanocrystallite of α-Fe crystallized from the amorphous. The films are deposited in low nitrogen partial pressure show excellent soft magnetism. It means that controlled crystallization of amorphous is an effective method to prepare nanocrystallite soft magnetic alloy thin films.

AB - The nanocrystallite Fe-Ta-N thin films with high Ta content were prepared by RF reactive sputtering. The dependence of structure and magnetic properties on nitrogen partial pressure P(N2) and annealing temperature Tan were investigated by XRD, TEM and VSM. It is found that the deposited films in the mixture gas of Ar+N2 consist of amorphous, after annealing nanocrystallite of α-Fe crystallized from the amorphous. The films are deposited in low nitrogen partial pressure show excellent soft magnetism. It means that controlled crystallization of amorphous is an effective method to prepare nanocrystallite soft magnetic alloy thin films.

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U2 - 10.1016/S0921-5107(99)00585-1

DO - 10.1016/S0921-5107(99)00585-1

M3 - Article

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SN - 0921-5107

VL - 68

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EP - 160

JO - Materials Science and Engineering B: Solid-State Materials for Advanced Technology

JF - Materials Science and Engineering B: Solid-State Materials for Advanced Technology

IS - 3

ER -

Investigation of RF-sputtered Fe-Ta-N thin films

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