Keyphrases
Current-voltage Characteristics
100%
N-GaN
100%
Barrier Height
50%
Device Structure
50%
Light Detector
25%
Heterostructure
25%
Barrier Materials
25%
Growth-related
25%
Hydrostatic Pressure
25%
Material System
25%
AlxGa1-xN
25%
Sapphire Substrate
25%
Energy Band
25%
Polarization Charge
25%
I-V Characteristics
25%
Depositional System
25%
I-V Measurement
25%
GaN Layers
25%
Metal-organic Chemical Vapor Deposition (MOCVD)
25%
Fundamental Current
25%
Conduction Path
25%
Current Conduction
25%
Single-barrier
25%
GaN Devices
25%
Light Emitters
25%
Current Transport
25%
Barrier Design
25%
Rectifying Behavior
25%
Current Conduction Mechanism
25%
Epitaxial Lateral Overgrowth
25%
Engineering
Device Structure
100%
Current-Voltage Characteristic
100%
Heterostructures
50%
Field Effect Transistors
50%
Sapphire Substrate
50%
Material System
50%
Deposition System
50%
Metal Organic Chemical Vapor Deposition
50%
Insufficient Quality
50%
Barrier Material
50%
Energy Band
50%
Rectification
50%
Material Science
Heterojunction
100%
Current-Voltage Characteristic
100%
Field Effect Transistors
100%
Sapphire
100%
Metal-Organic Chemical Vapor Deposition
100%
Current Voltage Characteristics
100%
Earth and Planetary Sciences
Hydrostatic Pressure
100%
Energy Band
100%
Rectification
100%
Emitter
100%
Metalorganic Chemical Vapor Deposition
100%