Investigation of γ′-Fe₄N thin films deposited on Si(1 0 0) and GaAs(1 0 0) substrates by facing target magnetron sputtering

Keyphrases

• Gallium Arsenide 100%
• Facing Targets Magnetron Sputtering 100%
• Fe4N Thin Film 100%
• Magnetic Properties 66%
• Low Temperature 33%
• Coercivity 33%
• Structural Properties 33%
• Magnetization 33%
• Preferred Orientation 33%
• Decreasing Temperature 33%
• Microstructure Properties 33%
• Lattice Mismatch 33%
• Low Coercivity 33%
• Single Crystal Si 33%
• Buffer Layer 33%
• High Saturation Magnetization 33%
• Thermal Disturbance 33%
• Soft Magnetic Properties 33%
• Intrinsic Stress 33%

Material Science

• Gallium Arsenide 100%
• Film 100%
• Magnetron Sputtering 100%
• Thin Films 100%
• Magnetic Property 75%
• Buffer Layer 25%
• Lattice Mismatch 25%
• Single Crystal 25%