γ′-Fe4N thin films with good soft magnetic properties were successfully prepared on single crystal Si(1 0 0) and GaAs(1 0 0) substrates with Fe buffer layer by facing target magnetron sputtering. The microstructure and magnetic properties of the samples at low temperature were investigated. Both structural and magnetic properties of the films were shown to be influenced by the substrate. Specifically, the film deposited on the GaAs exhibited a strong preferred orientation along the (1 0 0) plane, while the film deposited on Si exhibited higher saturation magnetization (Ms) and lower coercivity (Hc). The results suggest that the coercivity is probably related to the intrinsic stress and that Ms increases whereas Hc decreases with decreasing lattice mismatch. The Mr/Ms ratio decreased with decreasing temperature due to the effect of the thermal disturbance on the magnetization. Both films had a single easy magnetized direction parallel to the substrate plane.
Bibliographical noteFunding Information:
This work was supported by the National Natural Science Foundation of China (NSFC) ( No. 51201150 and 51172012 ), Educational Commission of Yunnan Province of China ( No. 2012Y439 ), Foundation of Yunnan University (No. 2011YB15 ) and National Science Foundation NNIN program (in USA). Parts of this work were carried out in the College of Science and Engineering Characterization Facility, University of Minnesota, which receives partial support from NSF through the MRSEC program.
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- A3. Magnetic properties
- Facing target magnetron sputtering
- γ′-FeN thin film