Intrinsic variability and reliability in nano-CMOS

Jyothi Velamala, Chi Chao Wang, Rui Zheng, Yun Ye, Yu Cao

Research output: Chapter in Book/Report/Conference proceedingConference contribution

2 Scopus citations


Random variations have been regarded as one of the major barriers of CMOS technology scaling. Besides profound physical effects that result from the vastly increased parameter variations due to manufacturing, performance is also affected with temporal conditions due to reliability degradation. Compact models that physically capture diese effects are crucial to bridge variability and reliability effects with design solutions. By understanding the underlying physics and analyzing the results from atomistic simulations, intrinsic variations from random dopant fluctuation (RDF), line-edge roughness (LER), and oxide thickness fluctuation (OTF) are presented in mis paper. Temporal parameter shift from aging mechanisms like negative bias temperature instability (NBTI) effect along with their models are also discussed. The statistical interaction of aging effects with static variability is further discussed. Finally, circuit performance variability impacted by random threshold voltage variation is benchmarked.

Original languageEnglish (US)
Title of host publicationSilicon Nitride, Silicon Dioxide, and Emerging Dielectrics 11
PublisherElectrochemical Society Inc.
Number of pages15
ISBN (Electronic)9781607682158
ISBN (Print)9781566778657
StatePublished - 2011
Externally publishedYes

Publication series

NameECS Transactions
ISSN (Print)1938-5862
ISSN (Electronic)1938-6737


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