We present the results of a theoretical study of the 2D electron gas mobility at a AlxGa1-x N/GaN heterointerface. All standard mechanisms, including scattering by acoustic and optical phonons, and remote and background (residual) impurities have been included in our calculation of theoretical mobility limits in a AlxGa1-xN/GaN structure. Comparison of calculations with experimental mobilities obtained from high quality MOCVD grown Al0.15Ga0.85N/GaN heterostructures shows that the low temperature mobility in these samples is dominated by scattering from ionized impurities, with a smaller contribution from acoustic phonons.
|Original language||English (US)|
|Number of pages||6|
|Journal||Materials Research Society Symposium - Proceedings|
|State||Published - Jan 1 1997|
|Event||Proceedings of the 1996 MRS Fall Symposium - Boston, MA, USA|
Duration: Dec 2 1996 → Dec 6 1996