Intrinsic mobility limits of a two-dimensional electron gas in AlGaN/GaN heterostructures

W. Walukiewicz, L. Hsu, J. M. Redwing

Research output: Contribution to journalConference articlepeer-review

2 Scopus citations

Abstract

We present the results of a theoretical study of the 2D electron gas mobility at a AlxGa1-x N/GaN heterointerface. All standard mechanisms, including scattering by acoustic and optical phonons, and remote and background (residual) impurities have been included in our calculation of theoretical mobility limits in a AlxGa1-xN/GaN structure. Comparison of calculations with experimental mobilities obtained from high quality MOCVD grown Al0.15Ga0.85N/GaN heterostructures shows that the low temperature mobility in these samples is dominated by scattering from ionized impurities, with a smaller contribution from acoustic phonons.

Original languageEnglish (US)
Pages (from-to)573-578
Number of pages6
JournalMaterials Research Society Symposium - Proceedings
Volume449
StatePublished - Jan 1 1997
EventProceedings of the 1996 MRS Fall Symposium - Boston, MA, USA
Duration: Dec 2 1996Dec 6 1996

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