Intracellular gallium nitride microrod laser

Minho S. Song; Hyeonjun Baek; Keundong Lee; Dongha Yoo; Kunook Chung; Jamin Lee; Hyungseok C. Moon; Byung Hun Lee; Hye Yoon Park; Gyu Chul Yi

doi:10.1038/s41427-021-00299-8

Intracellular gallium nitride microrod laser

Minho S. Song, Hyeonjun Baek, Keundong Lee, Dongha Yoo, Kunook Chung, Jamin Lee, Hyungseok C. Moon, Byung Hun Lee, Hye Yoon Park, Gyu Chul Yi

Research output: Contribution to journal › Article › peer-review

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Abstract

We report laser emission from gallium nitride (GaN) microrods that are introduced into mammalian cells and the application of these microrods for cell labeling. GaN microrods were grown on graphene-coated SiO₂/Si substrates by metal-organic vapor phase epitaxy. The GaN microrods are easily detached from the substrates because of the weakness of the van der Waals forces between GaN and graphene. The uptake of microrods into HeLa cells via endocytosis and viability after uptake were investigated. Normal cellular activities, including migration and division, were observed over 2 weeks in culture. Furthermore, the photoluminescence spectra of the internalized microrods exhibited sharp laser emission peaks with a low lasing threshold of 270 kW/cm².

Original language	English (US)
Article number	32
Journal	NPG Asia Materials
Volume	13
Issue number	1
DOIs	https://doi.org/10.1038/s41427-021-00299-8
State	Published - Dec 2021
Externally published	Yes

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title = "Intracellular gallium nitride microrod laser",

abstract = "We report laser emission from gallium nitride (GaN) microrods that are introduced into mammalian cells and the application of these microrods for cell labeling. GaN microrods were grown on graphene-coated SiO2/Si substrates by metal-organic vapor phase epitaxy. The GaN microrods are easily detached from the substrates because of the weakness of the van der Waals forces between GaN and graphene. The uptake of microrods into HeLa cells via endocytosis and viability after uptake were investigated. Normal cellular activities, including migration and division, were observed over 2 weeks in culture. Furthermore, the photoluminescence spectra of the internalized microrods exhibited sharp laser emission peaks with a low lasing threshold of 270 kW/cm2.",

author = "Song, {Minho S.} and Hyeonjun Baek and Keundong Lee and Dongha Yoo and Kunook Chung and Jamin Lee and Moon, {Hyungseok C.} and Lee, {Byung Hun} and Park, {Hye Yoon} and Yi, {Gyu Chul}",

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doi = "10.1038/s41427-021-00299-8",

language = "English (US)",

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T1 - Intracellular gallium nitride microrod laser

AU - Song, Minho S.

AU - Baek, Hyeonjun

AU - Lee, Keundong

AU - Yoo, Dongha

AU - Chung, Kunook

AU - Lee, Jamin

AU - Moon, Hyungseok C.

AU - Lee, Byung Hun

AU - Park, Hye Yoon

AU - Yi, Gyu Chul

PY - 2021/12

Y1 - 2021/12

N2 - We report laser emission from gallium nitride (GaN) microrods that are introduced into mammalian cells and the application of these microrods for cell labeling. GaN microrods were grown on graphene-coated SiO2/Si substrates by metal-organic vapor phase epitaxy. The GaN microrods are easily detached from the substrates because of the weakness of the van der Waals forces between GaN and graphene. The uptake of microrods into HeLa cells via endocytosis and viability after uptake were investigated. Normal cellular activities, including migration and division, were observed over 2 weeks in culture. Furthermore, the photoluminescence spectra of the internalized microrods exhibited sharp laser emission peaks with a low lasing threshold of 270 kW/cm2.

AB - We report laser emission from gallium nitride (GaN) microrods that are introduced into mammalian cells and the application of these microrods for cell labeling. GaN microrods were grown on graphene-coated SiO2/Si substrates by metal-organic vapor phase epitaxy. The GaN microrods are easily detached from the substrates because of the weakness of the van der Waals forces between GaN and graphene. The uptake of microrods into HeLa cells via endocytosis and viability after uptake were investigated. Normal cellular activities, including migration and division, were observed over 2 weeks in culture. Furthermore, the photoluminescence spectra of the internalized microrods exhibited sharp laser emission peaks with a low lasing threshold of 270 kW/cm2.

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ER -

Intracellular gallium nitride microrod laser

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