Internal photoemission of electrons and holes from (100)Si into HfO 2

V. V. Afanas'ev; A. Stesmans; F. Chen; X. Shi; S. A. Campbell

doi:10.1063/1.1495088

Internal photoemission of electrons and holes from (100)Si into HfO ₂

V. V. Afanas'ev, A. Stesmans, F. Chen, X. Shi, S. A. Campbell

Electrical and Computer Engineering

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Abstract

The electron energy band alignment at the Si/HfO₂ interfaces with different interlayers (Si₃N₄, SiON, and SiO ₂) is directly determined using internal photoemission of electrons and holes from Si into the Hf oxide. Irrespective of the interlayer type, the energy barrier for the Si valence electrons was found to be equal 3.1±0.1eV, yielding the conduction band offset of 2.0±0.1eV. Photoemission of holes is effectively suppressed by SiON and SiO₂ interlayers, yet it is observed to occur across the Si₃N₄ interlayer with a barrier of 3.6±0.1eV, which corresponds to a Si/HfO₂ valence band offset of 2.5±0.1eV. The HfO₂ band gap width of 5.6 eV, thus derived from the band offsets, coincides with the bulk value obtained from the oxide photoconductivity spectra.

Original language	English (US)
Pages (from-to)	1053-1055
Number of pages	3
Journal	Applied Physics Letters
Volume	81
Issue number	6
DOIs	https://doi.org/10.1063/1.1495088
State	Published - Aug 5 2002

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abstract = "The electron energy band alignment at the Si/HfO2 interfaces with different interlayers (Si3N4, SiON, and SiO 2) is directly determined using internal photoemission of electrons and holes from Si into the Hf oxide. Irrespective of the interlayer type, the energy barrier for the Si valence electrons was found to be equal 3.1±0.1eV, yielding the conduction band offset of 2.0±0.1eV. Photoemission of holes is effectively suppressed by SiON and SiO2 interlayers, yet it is observed to occur across the Si3N4 interlayer with a barrier of 3.6±0.1eV, which corresponds to a Si/HfO2 valence band offset of 2.5±0.1eV. The HfO2 band gap width of 5.6 eV, thus derived from the band offsets, coincides with the bulk value obtained from the oxide photoconductivity spectra.",

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T1 - Internal photoemission of electrons and holes from (100)Si into HfO 2

AU - Afanas'ev, V. V.

AU - Stesmans, A.

AU - Chen, F.

AU - Shi, X.

AU - Campbell, S. A.

PY - 2002/8/5

Y1 - 2002/8/5

N2 - The electron energy band alignment at the Si/HfO2 interfaces with different interlayers (Si3N4, SiON, and SiO 2) is directly determined using internal photoemission of electrons and holes from Si into the Hf oxide. Irrespective of the interlayer type, the energy barrier for the Si valence electrons was found to be equal 3.1±0.1eV, yielding the conduction band offset of 2.0±0.1eV. Photoemission of holes is effectively suppressed by SiON and SiO2 interlayers, yet it is observed to occur across the Si3N4 interlayer with a barrier of 3.6±0.1eV, which corresponds to a Si/HfO2 valence band offset of 2.5±0.1eV. The HfO2 band gap width of 5.6 eV, thus derived from the band offsets, coincides with the bulk value obtained from the oxide photoconductivity spectra.

AB - The electron energy band alignment at the Si/HfO2 interfaces with different interlayers (Si3N4, SiON, and SiO 2) is directly determined using internal photoemission of electrons and holes from Si into the Hf oxide. Irrespective of the interlayer type, the energy barrier for the Si valence electrons was found to be equal 3.1±0.1eV, yielding the conduction band offset of 2.0±0.1eV. Photoemission of holes is effectively suppressed by SiON and SiO2 interlayers, yet it is observed to occur across the Si3N4 interlayer with a barrier of 3.6±0.1eV, which corresponds to a Si/HfO2 valence band offset of 2.5±0.1eV. The HfO2 band gap width of 5.6 eV, thus derived from the band offsets, coincides with the bulk value obtained from the oxide photoconductivity spectra.

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Internal photoemission of electrons and holes from (100)Si into HfO ₂

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