Interfacial reactions at Al/LiF and LiF/Al

Z. T. Xie; W. H. Zhang; B. F. Ding; X. D. Gao; Y. T. You; Z. Y. Sun; X. M. Ding; X. Y. Hou

doi:10.1063/1.3077167

Interfacial reactions at Al/LiF and LiF/Al

Z. T. Xie, W. H. Zhang, B. F. Ding, X. D. Gao, Y. T. You, Z. Y. Sun, X. M. Ding, X. Y. Hou

Chemical Engineering and Materials Science

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Abstract

High-resolution synchrotron radiation photoemission spectroscopy was used to investigate the chemical properties of Al-LiF interfaces. An electronic state appeared at the Al/LiF interface with a binding energy 4.8 eV higher than that of the metallic Al 2p core level, but the state was hardly found to be present at the LiF/Al interface. This indicates that intensive chemical reaction could occur at the Al/LiF interface, while the reaction occurring at the LiF/Al interface would be weak. This result explains well the unsymmetrical electron injection from different sides of the symmetrical device of indium-tin-oxide\Al\ LiF\tris(8-hydroxyquinoline) aluminum\LiF\Al showing unsymmetrical current-voltage characteristics.

Original language	English (US)
Article number	063302
Journal	Applied Physics Letters
Volume	94
Issue number	6
DOIs	https://doi.org/10.1063/1.3077167
State	Published - 2009

Bibliographical note

Funding Information:
This work is supported by the NSFC Contract No. 10621063, the MOST, the Science and Technology Commission of Shanghai Municipality Contract No. 08JC1402300, and the Innovation Foundation of NSRL Contract No. 20080106S.

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@article{18041de43964425ea282cb1e767738b5,

title = "Interfacial reactions at Al/LiF and LiF/Al",

abstract = "High-resolution synchrotron radiation photoemission spectroscopy was used to investigate the chemical properties of Al-LiF interfaces. An electronic state appeared at the Al/LiF interface with a binding energy 4.8 eV higher than that of the metallic Al 2p core level, but the state was hardly found to be present at the LiF/Al interface. This indicates that intensive chemical reaction could occur at the Al/LiF interface, while the reaction occurring at the LiF/Al interface would be weak. This result explains well the unsymmetrical electron injection from different sides of the symmetrical device of indium-tin-oxide\textbackslash{}Al\textbackslash{} LiF\textbackslash{}tris(8-hydroxyquinoline) aluminum\textbackslash{}LiF\textbackslash{}Al showing unsymmetrical current-voltage characteristics.",

author = "Xie, \{Z. T.\} and Zhang, \{W. H.\} and Ding, \{B. F.\} and Gao, \{X. D.\} and You, \{Y. T.\} and Sun, \{Z. Y.\} and Ding, \{X. M.\} and Hou, \{X. Y.\}",

note = "Funding Information: This work is supported by the NSFC Contract No. 10621063, the MOST, the Science and Technology Commission of Shanghai Municipality Contract No. 08JC1402300, and the Innovation Foundation of NSRL Contract No. 20080106S. ",

year = "2009",

doi = "10.1063/1.3077167",

language = "English (US)",

volume = "94",

journal = "Applied Physics Letters",

issn = "0003-6951",

publisher = "American Institute of Physics",

number = "6",

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TY - JOUR

T1 - Interfacial reactions at Al/LiF and LiF/Al

AU - Xie, Z. T.

AU - Zhang, W. H.

AU - Ding, B. F.

AU - Gao, X. D.

AU - You, Y. T.

AU - Sun, Z. Y.

AU - Ding, X. M.

AU - Hou, X. Y.

N1 - Funding Information: This work is supported by the NSFC Contract No. 10621063, the MOST, the Science and Technology Commission of Shanghai Municipality Contract No. 08JC1402300, and the Innovation Foundation of NSRL Contract No. 20080106S.

PY - 2009

Y1 - 2009

N2 - High-resolution synchrotron radiation photoemission spectroscopy was used to investigate the chemical properties of Al-LiF interfaces. An electronic state appeared at the Al/LiF interface with a binding energy 4.8 eV higher than that of the metallic Al 2p core level, but the state was hardly found to be present at the LiF/Al interface. This indicates that intensive chemical reaction could occur at the Al/LiF interface, while the reaction occurring at the LiF/Al interface would be weak. This result explains well the unsymmetrical electron injection from different sides of the symmetrical device of indium-tin-oxide\Al\ LiF\tris(8-hydroxyquinoline) aluminum\LiF\Al showing unsymmetrical current-voltage characteristics.

AB - High-resolution synchrotron radiation photoemission spectroscopy was used to investigate the chemical properties of Al-LiF interfaces. An electronic state appeared at the Al/LiF interface with a binding energy 4.8 eV higher than that of the metallic Al 2p core level, but the state was hardly found to be present at the LiF/Al interface. This indicates that intensive chemical reaction could occur at the Al/LiF interface, while the reaction occurring at the LiF/Al interface would be weak. This result explains well the unsymmetrical electron injection from different sides of the symmetrical device of indium-tin-oxide\Al\ LiF\tris(8-hydroxyquinoline) aluminum\LiF\Al showing unsymmetrical current-voltage characteristics.

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DO - 10.1063/1.3077167

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JF - Applied Physics Letters

IS - 6

M1 - 063302

ER -

Interfacial reactions at Al/LiF and LiF/Al

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