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Rutile
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Epitaxial
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Structural Properties
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Germanium
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TiO2 Thin Film
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Alignment Properties
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Interfacial Band Alignment
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Heterointerface
60%
Spectroscopic Ellipsometry
40%
Valence Band Offset
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Band Alignment
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Conduction Band Offset
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Substrate Orientation
40%
Ge Layer
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Low Temperature
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Comprehensive Evaluation
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Field-effect Transistors
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Performance Analysis
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High-k Dielectric
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Metal Oxide
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Design Analysis
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Crystal Orientation
20%
Band Gap
20%
Molecular Beam Epitaxy
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Epitaxially Grown
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Interfacial Layer
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X-ray Photoelectron Spectroscopy
20%
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20%
Substrate Effect
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Ge Substrate
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Physical Vapor Deposition
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Band Offset
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GaAs Substrate
20%
Structural Alignment
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Contact Application
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Ge-based
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Metal-insulator-semiconductor
20%
Amorphous TiO2
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Tauc Plot
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Oxide Field
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Nanoscale Titanium Dioxide
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(111)A
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Dielectric Integration
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Material Science
Germanium
100%
Structural Property
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Titanium Dioxide
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Titanium Oxide
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Thin Films
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Band Offset
55%
Molecular Beam Epitaxy
11%
Metal Oxide
11%
Gallium Arsenide
11%
Field Effect Transistors
11%
Photoemission Spectroscopy
11%
Physical Vapor Deposition
11%
High-Resolution Transmission Electron Microscopy
11%
Dielectric Material
11%