Interdiffusion effect on quantum-well structures grown on GaSb substrate

Y. Wang, H. S. Djie, B. S. Ooi, P. Rotella, P. Dowd, V. Aimez, Y. Cao, Y. H. Zhang

Research output: Contribution to journalArticlepeer-review

9 Scopus citations

Abstract

We have modeled the effect of compositional interdiffusion on the optical properties of GaSb/AlGaSb and InGaAsSb/AlGaAsSb quantum-well structures grown on GaSb substrate. Blue shifts of emission wavelength as large as 270 nm and 700 nm are predicted from a 6 nm wide interdiffused GaSb/AlGaSb quantum-well for a diffusion length of 3 nm, and from a 10 nm wide interdiffused InGaAsSb/AlGaAsSb quantum-well for a diffusion length of 5 nm, respectively. The effects of the as-grown quantum-well width and applied electric field on the emission wavelength and their relationship to the interdiffusion are also investigated.

Original languageEnglish (US)
Pages (from-to)4352-4355
Number of pages4
JournalThin Solid Films
Volume515
Issue number10
DOIs
StatePublished - Mar 26 2007
Externally publishedYes

Bibliographical note

Funding Information:
This work is supported in part by the Pennsylvania Infrastructure Technology Alliance (PITA), a partnership of Carnegie Mellon University, Lehigh University and the Commonwealth of Pennsylvania Department of Community and Economic Development.

Keywords

  • GaSb
  • Interdiffusion
  • Intermixing
  • Quantum-well

Fingerprint

Dive into the research topics of 'Interdiffusion effect on quantum-well structures grown on GaSb substrate'. Together they form a unique fingerprint.

Cite this