Interactions between plasma and block copolymers used in directed self-assembly patterning

Stephen Sirard, Laurent Azarnouche, Emir Gurer, William Durand, Michael Maher, Kazunori Mori, Gregory Blachut, Dustin Janes, Yusuke Asano, Yasunobu Someya, Diane Hymes, David Graves, Christopher J. Ellison, C. Grant Willson

Research output: Chapter in Book/Report/Conference proceedingConference contribution

9 Citations (Scopus)

Abstract

The directed self-assembly (DSA) of block copolymers offers a promising route for scaling feature sizes below 20 nm. At these small dimensions, plasmas are often used to define the initial patterns. It is imperative to understand how plasmas interact with each block in order to design processes with sufficient etch contrast and pattern fidelity. Symmetric lamella forming block copolymers including, polystyrene-b-poly(methyl methacrylate) and several high-χ silicon-containing and tin-containing block copolymers were synthesized, along with homopolymers of each block, and exposed to various oxidizing, reducing, and fluorine-based plasma processes. Etch rate kinetics were measured, and plasma modifications of the materials were characterized using XPS, AES, and FTIR. Mechanisms for achieving etch contrast were elucidated and were highly dependent on the block copolymer architecture. For several of the polymers, plasma photoemissions were observed to play an important role in modifying the materials and forming etch-resistant protective layers. Furthermore, it was observed for the silicon- and tin-containing polymers that an initial transient state exists, where the polymers exhibit an enhanced etch rate, prior to the formation of the etch-resistant protective layer. Plasma developed patterns were demonstrated for the differing block copolymer materials with feature sizes ranging from 20 nm down to approximately 5 nm.

Original languageEnglish (US)
Title of host publicationAdvanced Etch Technology for Nanopatterning V
EditorsQinghuang Lin, Sebastian U. Engelmann
PublisherSPIE
Volume9782
ISBN (Electronic)9781510600171
DOIs
StatePublished - Jan 1 2016
EventSPIE Conference on Advanced Etch Technology for Nano-patterning V - San Jose, United States
Duration: Feb 22 2016Feb 23 2016

Other

OtherSPIE Conference on Advanced Etch Technology for Nano-patterning V
CountryUnited States
CitySan Jose
Period2/22/162/23/16

Fingerprint

Plasma interactions
Block Copolymers
Self-assembly
Patterning
block copolymers
Self assembly
Block copolymers
self assembly
copolymers
Plasma
Plasmas
Interaction
Polymers
Tin
interactions
Silicon
tin
polymers
Transient State
Fluorine

Keywords

  • Directed self-assembly
  • High X
  • PS-b-PMMA
  • Plasma etching
  • Silicon-containing
  • block copolymers

Cite this

Sirard, S., Azarnouche, L., Gurer, E., Durand, W., Maher, M., Mori, K., ... Willson, C. G. (2016). Interactions between plasma and block copolymers used in directed self-assembly patterning. In Q. Lin, & S. U. Engelmann (Eds.), Advanced Etch Technology for Nanopatterning V (Vol. 9782). [97820K] SPIE. https://doi.org/10.1117/12.2220305

Interactions between plasma and block copolymers used in directed self-assembly patterning. / Sirard, Stephen; Azarnouche, Laurent; Gurer, Emir; Durand, William; Maher, Michael; Mori, Kazunori; Blachut, Gregory; Janes, Dustin; Asano, Yusuke; Someya, Yasunobu; Hymes, Diane; Graves, David; Ellison, Christopher J.; Willson, C. Grant.

Advanced Etch Technology for Nanopatterning V. ed. / Qinghuang Lin; Sebastian U. Engelmann. Vol. 9782 SPIE, 2016. 97820K.

Research output: Chapter in Book/Report/Conference proceedingConference contribution

Sirard, S, Azarnouche, L, Gurer, E, Durand, W, Maher, M, Mori, K, Blachut, G, Janes, D, Asano, Y, Someya, Y, Hymes, D, Graves, D, Ellison, CJ & Willson, CG 2016, Interactions between plasma and block copolymers used in directed self-assembly patterning. in Q Lin & SU Engelmann (eds), Advanced Etch Technology for Nanopatterning V. vol. 9782, 97820K, SPIE, SPIE Conference on Advanced Etch Technology for Nano-patterning V, San Jose, United States, 2/22/16. https://doi.org/10.1117/12.2220305
Sirard S, Azarnouche L, Gurer E, Durand W, Maher M, Mori K et al. Interactions between plasma and block copolymers used in directed self-assembly patterning. In Lin Q, Engelmann SU, editors, Advanced Etch Technology for Nanopatterning V. Vol. 9782. SPIE. 2016. 97820K https://doi.org/10.1117/12.2220305
Sirard, Stephen ; Azarnouche, Laurent ; Gurer, Emir ; Durand, William ; Maher, Michael ; Mori, Kazunori ; Blachut, Gregory ; Janes, Dustin ; Asano, Yusuke ; Someya, Yasunobu ; Hymes, Diane ; Graves, David ; Ellison, Christopher J. ; Willson, C. Grant. / Interactions between plasma and block copolymers used in directed self-assembly patterning. Advanced Etch Technology for Nanopatterning V. editor / Qinghuang Lin ; Sebastian U. Engelmann. Vol. 9782 SPIE, 2016.
@inproceedings{434bdd74116c4c16bada74c86f957fc4,
title = "Interactions between plasma and block copolymers used in directed self-assembly patterning",
abstract = "The directed self-assembly (DSA) of block copolymers offers a promising route for scaling feature sizes below 20 nm. At these small dimensions, plasmas are often used to define the initial patterns. It is imperative to understand how plasmas interact with each block in order to design processes with sufficient etch contrast and pattern fidelity. Symmetric lamella forming block copolymers including, polystyrene-b-poly(methyl methacrylate) and several high-χ silicon-containing and tin-containing block copolymers were synthesized, along with homopolymers of each block, and exposed to various oxidizing, reducing, and fluorine-based plasma processes. Etch rate kinetics were measured, and plasma modifications of the materials were characterized using XPS, AES, and FTIR. Mechanisms for achieving etch contrast were elucidated and were highly dependent on the block copolymer architecture. For several of the polymers, plasma photoemissions were observed to play an important role in modifying the materials and forming etch-resistant protective layers. Furthermore, it was observed for the silicon- and tin-containing polymers that an initial transient state exists, where the polymers exhibit an enhanced etch rate, prior to the formation of the etch-resistant protective layer. Plasma developed patterns were demonstrated for the differing block copolymer materials with feature sizes ranging from 20 nm down to approximately 5 nm.",
keywords = "Directed self-assembly, High X, PS-b-PMMA, Plasma etching, Silicon-containing, block copolymers",
author = "Stephen Sirard and Laurent Azarnouche and Emir Gurer and William Durand and Michael Maher and Kazunori Mori and Gregory Blachut and Dustin Janes and Yusuke Asano and Yasunobu Someya and Diane Hymes and David Graves and Ellison, {Christopher J.} and Willson, {C. Grant}",
year = "2016",
month = "1",
day = "1",
doi = "10.1117/12.2220305",
language = "English (US)",
volume = "9782",
editor = "Qinghuang Lin and Engelmann, {Sebastian U.}",
booktitle = "Advanced Etch Technology for Nanopatterning V",
publisher = "SPIE",
address = "United States",

}

TY - GEN

T1 - Interactions between plasma and block copolymers used in directed self-assembly patterning

AU - Sirard, Stephen

AU - Azarnouche, Laurent

AU - Gurer, Emir

AU - Durand, William

AU - Maher, Michael

AU - Mori, Kazunori

AU - Blachut, Gregory

AU - Janes, Dustin

AU - Asano, Yusuke

AU - Someya, Yasunobu

AU - Hymes, Diane

AU - Graves, David

AU - Ellison, Christopher J.

AU - Willson, C. Grant

PY - 2016/1/1

Y1 - 2016/1/1

N2 - The directed self-assembly (DSA) of block copolymers offers a promising route for scaling feature sizes below 20 nm. At these small dimensions, plasmas are often used to define the initial patterns. It is imperative to understand how plasmas interact with each block in order to design processes with sufficient etch contrast and pattern fidelity. Symmetric lamella forming block copolymers including, polystyrene-b-poly(methyl methacrylate) and several high-χ silicon-containing and tin-containing block copolymers were synthesized, along with homopolymers of each block, and exposed to various oxidizing, reducing, and fluorine-based plasma processes. Etch rate kinetics were measured, and plasma modifications of the materials were characterized using XPS, AES, and FTIR. Mechanisms for achieving etch contrast were elucidated and were highly dependent on the block copolymer architecture. For several of the polymers, plasma photoemissions were observed to play an important role in modifying the materials and forming etch-resistant protective layers. Furthermore, it was observed for the silicon- and tin-containing polymers that an initial transient state exists, where the polymers exhibit an enhanced etch rate, prior to the formation of the etch-resistant protective layer. Plasma developed patterns were demonstrated for the differing block copolymer materials with feature sizes ranging from 20 nm down to approximately 5 nm.

AB - The directed self-assembly (DSA) of block copolymers offers a promising route for scaling feature sizes below 20 nm. At these small dimensions, plasmas are often used to define the initial patterns. It is imperative to understand how plasmas interact with each block in order to design processes with sufficient etch contrast and pattern fidelity. Symmetric lamella forming block copolymers including, polystyrene-b-poly(methyl methacrylate) and several high-χ silicon-containing and tin-containing block copolymers were synthesized, along with homopolymers of each block, and exposed to various oxidizing, reducing, and fluorine-based plasma processes. Etch rate kinetics were measured, and plasma modifications of the materials were characterized using XPS, AES, and FTIR. Mechanisms for achieving etch contrast were elucidated and were highly dependent on the block copolymer architecture. For several of the polymers, plasma photoemissions were observed to play an important role in modifying the materials and forming etch-resistant protective layers. Furthermore, it was observed for the silicon- and tin-containing polymers that an initial transient state exists, where the polymers exhibit an enhanced etch rate, prior to the formation of the etch-resistant protective layer. Plasma developed patterns were demonstrated for the differing block copolymer materials with feature sizes ranging from 20 nm down to approximately 5 nm.

KW - Directed self-assembly

KW - High X

KW - PS-b-PMMA

KW - Plasma etching

KW - Silicon-containing

KW - block copolymers

UR - http://www.scopus.com/inward/record.url?scp=84981541202&partnerID=8YFLogxK

UR - http://www.scopus.com/inward/citedby.url?scp=84981541202&partnerID=8YFLogxK

U2 - 10.1117/12.2220305

DO - 10.1117/12.2220305

M3 - Conference contribution

AN - SCOPUS:84981541202

VL - 9782

BT - Advanced Etch Technology for Nanopatterning V

A2 - Lin, Qinghuang

A2 - Engelmann, Sebastian U.

PB - SPIE

ER -