Interaction of SiH3 radicals with deuterated (hydrogenated) amorphous silicon surfaces

Sumit Agarwal; Mayur S. Valipa; Bram Hoex; M. C M Van De Sanden; Dimitrios Maroudas; Eray S. Aydil

doi:10.1016/j.susc.2005.09.026

Interaction of SiH₃ radicals with deuterated (hydrogenated) amorphous silicon surfaces

Sumit Agarwal
, Mayur S. Valipa
, Bram Hoex
, M. C M Van De Sanden
, Dimitrios Maroudas
, Eray S. Aydil

Chemical Engineering and Materials Science

Research output: Contribution to journal › Article › peer-review

20 Scopus citations

Abstract

Interactions of SiH₃ radicals with surfaces of deuterated amorphous silicon (a-Si:D) and hydrogenated amorphous silicon (a-Si:H) films were studied using attenuated total reflection Fourier transform infrared spectroscopy and molecular-dynamics simulations, respectively. SiH₃ radicals abstract surface silicon deuterides through an Eley-Rideal abstraction reaction. Surface deuteride abstraction occurs on the same time scale as SiH₃ insertion into Si-Si bonds over the substrate temperature range of 60-300 °C. Some fraction of SiH₃ adsorbing on the a-Si:D/a-Si:H films dissociates and releases H into the subsurface. These observations are consistent with the temperature independent reaction probability of SiH₃ and the temperature dependent smoothening mechanism of a-Si:H thin films.

Original language	English (US)
Pages (from-to)	35-44
Number of pages	10
Journal	Surface Science
Volume	598
Issue number	1-3
DOIs	https://doi.org/10.1016/j.susc.2005.09.026
State	Published - Dec 20 2005

Bibliographical note

Funding Information:
This work was supported by the NSF/DOE Partnership for Basic Plasma Science and Engineering (Award Nos. ECS-0317345, and ECS-0317459). The authors also acknowledge Dr. W.M.M. Kessels and Dr. T. Bakos for insightful discussions.

Keywords

Amorphous surfaces
Amorphous thin films
Chemical vapor deposition
Plasma processing
Silane
Silicon
Surface chemical reaction

Publisher link

10.1016/j.susc.2005.09.026

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@article{de71806733d24391a402c431dc3d8a29,

title = "Interaction of SiH3 radicals with deuterated (hydrogenated) amorphous silicon surfaces",

abstract = "Interactions of SiH3 radicals with surfaces of deuterated amorphous silicon (a-Si:D) and hydrogenated amorphous silicon (a-Si:H) films were studied using attenuated total reflection Fourier transform infrared spectroscopy and molecular-dynamics simulations, respectively. SiH3 radicals abstract surface silicon deuterides through an Eley-Rideal abstraction reaction. Surface deuteride abstraction occurs on the same time scale as SiH3 insertion into Si-Si bonds over the substrate temperature range of 60-300 °C. Some fraction of SiH3 adsorbing on the a-Si:D/a-Si:H films dissociates and releases H into the subsurface. These observations are consistent with the temperature independent reaction probability of SiH3 and the temperature dependent smoothening mechanism of a-Si:H thin films.",

keywords = "Amorphous surfaces, Amorphous thin films, Chemical vapor deposition, Plasma processing, Silane, Silicon, Surface chemical reaction",

author = "Sumit Agarwal and Valipa, \{Mayur S.\} and Bram Hoex and \{Van De Sanden\}, \{M. C M\} and Dimitrios Maroudas and Aydil, \{Eray S.\}",

note = "Funding Information: This work was supported by the NSF/DOE Partnership for Basic Plasma Science and Engineering (Award Nos. ECS-0317345, and ECS-0317459). The authors also acknowledge Dr. W.M.M. Kessels and Dr. T. Bakos for insightful discussions.",

year = "2005",

month = dec,

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doi = "10.1016/j.susc.2005.09.026",

language = "English (US)",

volume = "598",

pages = "35--44",

journal = "Surface Science",

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T1 - Interaction of SiH3 radicals with deuterated (hydrogenated) amorphous silicon surfaces

AU - Agarwal, Sumit

AU - Valipa, Mayur S.

AU - Hoex, Bram

AU - Van De Sanden, M. C M

AU - Maroudas, Dimitrios

AU - Aydil, Eray S.

N1 - Funding Information: This work was supported by the NSF/DOE Partnership for Basic Plasma Science and Engineering (Award Nos. ECS-0317345, and ECS-0317459). The authors also acknowledge Dr. W.M.M. Kessels and Dr. T. Bakos for insightful discussions.

PY - 2005/12/20

Y1 - 2005/12/20

N2 - Interactions of SiH3 radicals with surfaces of deuterated amorphous silicon (a-Si:D) and hydrogenated amorphous silicon (a-Si:H) films were studied using attenuated total reflection Fourier transform infrared spectroscopy and molecular-dynamics simulations, respectively. SiH3 radicals abstract surface silicon deuterides through an Eley-Rideal abstraction reaction. Surface deuteride abstraction occurs on the same time scale as SiH3 insertion into Si-Si bonds over the substrate temperature range of 60-300 °C. Some fraction of SiH3 adsorbing on the a-Si:D/a-Si:H films dissociates and releases H into the subsurface. These observations are consistent with the temperature independent reaction probability of SiH3 and the temperature dependent smoothening mechanism of a-Si:H thin films.

AB - Interactions of SiH3 radicals with surfaces of deuterated amorphous silicon (a-Si:D) and hydrogenated amorphous silicon (a-Si:H) films were studied using attenuated total reflection Fourier transform infrared spectroscopy and molecular-dynamics simulations, respectively. SiH3 radicals abstract surface silicon deuterides through an Eley-Rideal abstraction reaction. Surface deuteride abstraction occurs on the same time scale as SiH3 insertion into Si-Si bonds over the substrate temperature range of 60-300 °C. Some fraction of SiH3 adsorbing on the a-Si:D/a-Si:H films dissociates and releases H into the subsurface. These observations are consistent with the temperature independent reaction probability of SiH3 and the temperature dependent smoothening mechanism of a-Si:H thin films.

KW - Amorphous surfaces

KW - Amorphous thin films

KW - Chemical vapor deposition

KW - Plasma processing

KW - Silane

KW - Silicon

KW - Surface chemical reaction

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DO - 10.1016/j.susc.2005.09.026

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