Interaction between localized and extended modes of oxygen in silicon

M. D. McCluskey; L. Hsu; J. L. Lindström

doi:10.1016/j.physb.2003.09.145

Interaction between localized and extended modes of oxygen in silicon

M. D. McCluskey, L. Hsu, J. L. Lindström

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2 Scopus citations

Abstract

The interaction between localized and extended vibrational modes in solids is of central importance in understanding how local vibrational modes (LVMs) decay into phonons. In this study, we have investigated interstitial oxygen (O_i) in silicon as a model 'laboratory' for such local-extended mode interactions. Using hydrostatic pressure and infrared spectroscopy, we brought the stretch mode of ¹⁸O_i in silicon into resonance with a second harmonic of the ¹⁸O_i resonant mode. The resonant interaction results in an avoided crossing between the modes. In addition to this anti-crossing behaviour, the line width abruptly increases, due to a dramatic decrease in lifetime as the LVM enters the two-phonon continuum. A model of the interaction between these modes produced excellent agreement with the experimentally observed frequencies and line widths.

Original language	English (US)
Pages (from-to)	514-517
Number of pages	4
Journal	Physica B: Condensed Matter
Volume	340-342
DOIs	https://doi.org/10.1016/j.physb.2003.09.145
State	Published - Dec 31 2003
Event	Proceedings of the 22nd International Conference on Defects in (ICDS-22) - Aarhus, Denmark Duration: Jul 28 2003 → Aug 1 2003

Bibliographical note

Funding Information:
The authors wish to acknowledge E.E. Haller and J. Beeman (Lawrence Berkeley National Laboratory) for providing the Ge:Cu detector and S. Watson (Washington State University) for construction of the diamond-anvil cells. This work was supported by the US National Science Foundation through Grant No. DMR-0203832. Support was also provided by WSU's Institute for Shock Physics through the DOE, Grant No. DE-FG03-97SF21388.

Keywords

Local vibrational modes
Oxygen
Pressure
Silicon

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10.1016/j.physb.2003.09.145

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title = "Interaction between localized and extended modes of oxygen in silicon",

abstract = "The interaction between localized and extended vibrational modes in solids is of central importance in understanding how local vibrational modes (LVMs) decay into phonons. In this study, we have investigated interstitial oxygen (Oi) in silicon as a model 'laboratory' for such local-extended mode interactions. Using hydrostatic pressure and infrared spectroscopy, we brought the stretch mode of 18Oi in silicon into resonance with a second harmonic of the 18Oi resonant mode. The resonant interaction results in an avoided crossing between the modes. In addition to this anti-crossing behaviour, the line width abruptly increases, due to a dramatic decrease in lifetime as the LVM enters the two-phonon continuum. A model of the interaction between these modes produced excellent agreement with the experimentally observed frequencies and line widths.",

keywords = "Local vibrational modes, Oxygen, Pressure, Silicon",

author = "McCluskey, {M. D.} and L. Hsu and Lindstr{\"o}m, {J. L.}",

note = "Funding Information: The authors wish to acknowledge E.E. Haller and J. Beeman (Lawrence Berkeley National Laboratory) for providing the Ge:Cu detector and S. Watson (Washington State University) for construction of the diamond-anvil cells. This work was supported by the US National Science Foundation through Grant No. DMR-0203832. Support was also provided by WSU's Institute for Shock Physics through the DOE, Grant No. DE-FG03-97SF21388.; Proceedings of the 22nd International Conference on Defects in (ICDS-22) ; Conference date: 28-07-2003 Through 01-08-2003",

year = "2003",

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doi = "10.1016/j.physb.2003.09.145",

language = "English (US)",

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pages = "514--517",

journal = "Physica B: Condensed Matter",

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TY - JOUR

T1 - Interaction between localized and extended modes of oxygen in silicon

AU - McCluskey, M. D.

AU - Hsu, L.

AU - Lindström, J. L.

N1 - Funding Information: The authors wish to acknowledge E.E. Haller and J. Beeman (Lawrence Berkeley National Laboratory) for providing the Ge:Cu detector and S. Watson (Washington State University) for construction of the diamond-anvil cells. This work was supported by the US National Science Foundation through Grant No. DMR-0203832. Support was also provided by WSU's Institute for Shock Physics through the DOE, Grant No. DE-FG03-97SF21388.

PY - 2003/12/31

Y1 - 2003/12/31

N2 - The interaction between localized and extended vibrational modes in solids is of central importance in understanding how local vibrational modes (LVMs) decay into phonons. In this study, we have investigated interstitial oxygen (Oi) in silicon as a model 'laboratory' for such local-extended mode interactions. Using hydrostatic pressure and infrared spectroscopy, we brought the stretch mode of 18Oi in silicon into resonance with a second harmonic of the 18Oi resonant mode. The resonant interaction results in an avoided crossing between the modes. In addition to this anti-crossing behaviour, the line width abruptly increases, due to a dramatic decrease in lifetime as the LVM enters the two-phonon continuum. A model of the interaction between these modes produced excellent agreement with the experimentally observed frequencies and line widths.

AB - The interaction between localized and extended vibrational modes in solids is of central importance in understanding how local vibrational modes (LVMs) decay into phonons. In this study, we have investigated interstitial oxygen (Oi) in silicon as a model 'laboratory' for such local-extended mode interactions. Using hydrostatic pressure and infrared spectroscopy, we brought the stretch mode of 18Oi in silicon into resonance with a second harmonic of the 18Oi resonant mode. The resonant interaction results in an avoided crossing between the modes. In addition to this anti-crossing behaviour, the line width abruptly increases, due to a dramatic decrease in lifetime as the LVM enters the two-phonon continuum. A model of the interaction between these modes produced excellent agreement with the experimentally observed frequencies and line widths.

KW - Local vibrational modes

KW - Oxygen

KW - Pressure

KW - Silicon

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U2 - 10.1016/j.physb.2003.09.145

DO - 10.1016/j.physb.2003.09.145

M3 - Conference article

AN - SCOPUS:0347764774

SN - 0921-4526

VL - 340-342

SP - 514

EP - 517

JO - Physica B: Condensed Matter

JF - Physica B: Condensed Matter

T2 - Proceedings of the 22nd International Conference on Defects in (ICDS-22)

Y2 - 28 July 2003 through 1 August 2003

ER -

Interaction between localized and extended modes of oxygen in silicon

Abstract

Bibliographical note

Keywords

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