Interaction between localized and extended modes of oxygen in silicon

M. D. McCluskey, L. Hsu, J. L. Lindström

Research output: Contribution to journalConference article

2 Scopus citations

Abstract

The interaction between localized and extended vibrational modes in solids is of central importance in understanding how local vibrational modes (LVMs) decay into phonons. In this study, we have investigated interstitial oxygen (Oi) in silicon as a model 'laboratory' for such local-extended mode interactions. Using hydrostatic pressure and infrared spectroscopy, we brought the stretch mode of 18Oi in silicon into resonance with a second harmonic of the 18Oi resonant mode. The resonant interaction results in an avoided crossing between the modes. In addition to this anti-crossing behaviour, the line width abruptly increases, due to a dramatic decrease in lifetime as the LVM enters the two-phonon continuum. A model of the interaction between these modes produced excellent agreement with the experimentally observed frequencies and line widths.

Original languageEnglish (US)
Pages (from-to)514-517
Number of pages4
JournalPhysica B: Condensed Matter
Volume340-342
DOIs
StatePublished - Dec 31 2003
EventProceedings of the 22nd International Conference on Defects in (ICDS-22) - Aarhus, Denmark
Duration: Jul 28 2003Aug 1 2003

Keywords

  • Local vibrational modes
  • Oxygen
  • Pressure
  • Silicon

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