Integration of yttrium iron garnet films via reactive RF sputtering

Bethanie J.H. Stadler, Anand Gopinath

Research output: Contribution to journalConference article

4 Scopus citations

Abstract

This work aims to equip integrated optical circuits with important magneto-optical devices, such as isolators, that are currently available only as discrete components. Reactive rf sputtering was used to grow cerium-doped yttrium iron garnet films onto a variety of substrates, including SiO2-buffered Si, fused SiO2 and MgO. MgO was used because it has proven to be a good buffer material for semiconducting substrates. Ce-doping was not effective via reactive sputtering due to a scale which formed on the Ce metal that prevented sufficient contact with the rf target. The films were amorphous as deposited. Stoichiometric Y3Fe5O12 films yielded smooth, polycrystalline garnet films upon annealing. A study of the effect of fluctuations in the Y:Fe ratio revealed that oxygen content is important for the prevention of secondary phases. Therefore, a high oxygen content should be used in the sputtering gas and subsequent annealing should be performed in oxygen.

Original languageEnglish (US)
Pages (from-to)481-486
Number of pages6
JournalMaterials Research Society Symposium - Proceedings
Volume517
StatePublished - Dec 1 1998
EventProceedings of the 1998 MRS Spring Symposium - San Francisco, CA, USA
Duration: Apr 13 1998Apr 15 1998

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