Inscription of lateral superlattices in semiconductors using structured light

C. Hnatovsky; M. A. Zudov; G. D. Austing; A. Bogan; S. J. Mihailov; M. Hilke; K. W. West; L. N. Pfeiffer; S. A. Studenikin

doi:10.1063/5.0102432

Inscription of lateral superlattices in semiconductors using structured light

C. Hnatovsky
, M. A. Zudov
, G. D. Austing
, A. Bogan
, S. J. Mihailov
, M. Hilke
, K. W. West
, L. N. Pfeiffer
, S. A. Studenikin

Physics and Astronomy (Twin Cities)

Research output: Contribution to journal › Article › peer-review

2 Scopus citations

Abstract

We propose a non-destructive, all-optical technique to imprint embedded lateral superlattices near semiconductor heterostructures by illuminating the samples with a stable interference pattern generated by a phase diffraction grating. We demonstrate the technique on an ultrahigh mobility GaAs/AlGaAs sample with a Si δ-doping by inducing a persistent charge redistribution at cryogenic temperatures in the doping layer containing DX-centers. Weiss commensurability oscillations in the magnetoresistance of the light-induced superlattice are observed and analyzed to obtain its characteristics.

Original language	English (US)
Article number	044301
Journal	Journal of Applied Physics
Volume	132
Issue number	4
DOIs	https://doi.org/10.1063/5.0102432
State	Published - Jul 28 2022

Bibliographical note

Funding Information:
We thank N. Fong for the fabrication of the Hall bar. This research was funded in part by the Gordon and Betty Moore Foundation’s EPiQS Initiative (Grant No. GBMF9615) to L.N.P., and by the National Science Foundation MRSEC (Grant No. DMR 2011750) to Princeton University. M. A. Z. acknowledges support by the NSF Award No. DMR-1309578.

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© 2022 Crown.

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10.1063/5.0102432

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title = "Inscription of lateral superlattices in semiconductors using structured light",

abstract = "We propose a non-destructive, all-optical technique to imprint embedded lateral superlattices near semiconductor heterostructures by illuminating the samples with a stable interference pattern generated by a phase diffraction grating. We demonstrate the technique on an ultrahigh mobility GaAs/AlGaAs sample with a Si δ-doping by inducing a persistent charge redistribution at cryogenic temperatures in the doping layer containing DX-centers. Weiss commensurability oscillations in the magnetoresistance of the light-induced superlattice are observed and analyzed to obtain its characteristics.",

author = "C. Hnatovsky and Zudov, \{M. A.\} and Austing, \{G. D.\} and A. Bogan and Mihailov, \{S. J.\} and M. Hilke and West, \{K. W.\} and Pfeiffer, \{L. N.\} and Studenikin, \{S. A.\}",

note = "Funding Information: We thank N. Fong for the fabrication of the Hall bar. This research was funded in part by the Gordon and Betty Moore Foundation{\textquoteright}s EPiQS Initiative (Grant No. GBMF9615) to L.N.P., and by the National Science Foundation MRSEC (Grant No. DMR 2011750) to Princeton University. M. A. Z. acknowledges support by the NSF Award No. DMR-1309578. Publisher Copyright: {\textcopyright} 2022 Crown.",

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doi = "10.1063/5.0102432",

language = "English (US)",

volume = "132",

journal = "Journal of Applied Physics",

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T1 - Inscription of lateral superlattices in semiconductors using structured light

AU - Hnatovsky, C.

AU - Zudov, M. A.

AU - Austing, G. D.

AU - Bogan, A.

AU - Mihailov, S. J.

AU - Hilke, M.

AU - West, K. W.

AU - Pfeiffer, L. N.

AU - Studenikin, S. A.

N1 - Funding Information: We thank N. Fong for the fabrication of the Hall bar. This research was funded in part by the Gordon and Betty Moore Foundation’s EPiQS Initiative (Grant No. GBMF9615) to L.N.P., and by the National Science Foundation MRSEC (Grant No. DMR 2011750) to Princeton University. M. A. Z. acknowledges support by the NSF Award No. DMR-1309578. Publisher Copyright: © 2022 Crown.

PY - 2022/7/28

Y1 - 2022/7/28

N2 - We propose a non-destructive, all-optical technique to imprint embedded lateral superlattices near semiconductor heterostructures by illuminating the samples with a stable interference pattern generated by a phase diffraction grating. We demonstrate the technique on an ultrahigh mobility GaAs/AlGaAs sample with a Si δ-doping by inducing a persistent charge redistribution at cryogenic temperatures in the doping layer containing DX-centers. Weiss commensurability oscillations in the magnetoresistance of the light-induced superlattice are observed and analyzed to obtain its characteristics.

AB - We propose a non-destructive, all-optical technique to imprint embedded lateral superlattices near semiconductor heterostructures by illuminating the samples with a stable interference pattern generated by a phase diffraction grating. We demonstrate the technique on an ultrahigh mobility GaAs/AlGaAs sample with a Si δ-doping by inducing a persistent charge redistribution at cryogenic temperatures in the doping layer containing DX-centers. Weiss commensurability oscillations in the magnetoresistance of the light-induced superlattice are observed and analyzed to obtain its characteristics.

UR - https://www.scopus.com/pages/publications/85135193138

UR - https://www.scopus.com/pages/publications/85135193138#tab=citedBy

U2 - 10.1063/5.0102432

DO - 10.1063/5.0102432

M3 - Article

AN - SCOPUS:85135193138

SN - 0021-8979

VL - 132

JO - Journal of Applied Physics

JF - Journal of Applied Physics

IS - 4

M1 - 044301

ER -

Inscription of lateral superlattices in semiconductors using structured light

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