Inscription of lateral superlattices in semiconductors using structured light

C. Hnatovsky, M. A. Zudov, G. D. Austing, A. Bogan, S. J. Mihailov, M. Hilke, K. W. West, L. N. Pfeiffer, S. A. Studenikin

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Abstract

We propose a non-destructive, all-optical technique to imprint embedded lateral superlattices near semiconductor heterostructures by illuminating the samples with a stable interference pattern generated by a phase diffraction grating. We demonstrate the technique on an ultrahigh mobility GaAs/AlGaAs sample with a Si δ-doping by inducing a persistent charge redistribution at cryogenic temperatures in the doping layer containing DX-centers. Weiss commensurability oscillations in the magnetoresistance of the light-induced superlattice are observed and analyzed to obtain its characteristics.

Original languageEnglish (US)
Article number044301
JournalJournal of Applied Physics
Volume132
Issue number4
DOIs
StatePublished - Jul 28 2022
Externally publishedYes

Bibliographical note

Funding Information:
We thank N. Fong for the fabrication of the Hall bar. This research was funded in part by the Gordon and Betty Moore Foundation’s EPiQS Initiative (Grant No. GBMF9615) to L.N.P., and by the National Science Foundation MRSEC (Grant No. DMR 2011750) to Princeton University. M. A. Z. acknowledges support by the NSF Award No. DMR-1309578.

Publisher Copyright:
© 2022 Crown.

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