InP MESFET with high breakdown voltage

Wei Yang; Z. Abid; A. Gopinath; F. Williamson

doi:10.1109/ICIPRM.1992.235675

InP MESFET with high breakdown voltage

Wei Yang, Z. Abid, A. Gopinath, F. Williamson

Electrical and Computer Engineering

Research output: Chapter in Book/Report/Conference proceeding › Conference contribution

Abstract

We report the fabrication of InP n-channel MESFET with high breakdown voltage. Using buried p⁺ planar doping, we have obtained enhanced Schottky gate barrier greater than 1.0 eV and gate-drain breakdown voltage in excess of 30 volt. RF measurement gave fmax = 15 GHz for 1 μm gate length device and 9 GHz for 2 μm device.

Original language	English (US)
Title of host publication	LEOS 1992 Summer Topical Meeting Digest on Broadband Analog and Digital Optoelectronics, Optical Multiple Access Networks, Integrated Optoelectronics, and Smart Pixels - 4th International Conference on Indium Phosphide and Related Materials, IPRM 1992
Publisher	Institute of Electrical and Electronics Engineers Inc.
Pages	368-370
Number of pages	3
ISBN (Electronic)	0780305221, 9780780305229
DOIs	https://doi.org/10.1109/ICIPRM.1992.235675
State	Published - Jan 1 1992
Event	LEOS 1992 Summer Topical Meeting Digest on Broadband Analog and Digital Optoelectronics, Optical Multiple Access Networks, Integrated Optoelectronics, and Smart Pixels - 4th International Conference on Indium Phosphide and Related Materials, IPRM 1992 - Newport, United States Duration: Apr 21 1992 → Apr 24 1992

Publication series

Name	LEOS 1992 Summer Topical Meeting Digest on Broadband Analog and Digital Optoelectronics, Optical Multiple Access Networks, Integrated Optoelectronics, and Smart Pixels - 4th International Conference on Indium Phosphide and Related Materials, IPRM 1992

Conference

Conference	LEOS 1992 Summer Topical Meeting Digest on Broadband Analog and Digital Optoelectronics, Optical Multiple Access Networks, Integrated Optoelectronics, and Smart Pixels - 4th International Conference on Indium Phosphide and Related Materials, IPRM 1992
Country/Territory	United States
City	Newport
Period	4/21/92 → 4/24/92

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10.1109/ICIPRM.1992.235675

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Yang, W., Abid, Z., Gopinath, A., & Williamson, F. (1992). InP MESFET with high breakdown voltage. In LEOS 1992 Summer Topical Meeting Digest on Broadband Analog and Digital Optoelectronics, Optical Multiple Access Networks, Integrated Optoelectronics, and Smart Pixels - 4th International Conference on Indium Phosphide and Related Materials, IPRM 1992 (pp. 368-370). [235675] (LEOS 1992 Summer Topical Meeting Digest on Broadband Analog and Digital Optoelectronics, Optical Multiple Access Networks, Integrated Optoelectronics, and Smart Pixels - 4th International Conference on Indium Phosphide and Related Materials, IPRM 1992). Institute of Electrical and Electronics Engineers Inc.. https://doi.org/10.1109/ICIPRM.1992.235675

InP MESFET with high breakdown voltage. / Yang, Wei; Abid, Z.; Gopinath, A. et al.
LEOS 1992 Summer Topical Meeting Digest on Broadband Analog and Digital Optoelectronics, Optical Multiple Access Networks, Integrated Optoelectronics, and Smart Pixels - 4th International Conference on Indium Phosphide and Related Materials, IPRM 1992. Institute of Electrical and Electronics Engineers Inc., 1992. p. 368-370 235675 (LEOS 1992 Summer Topical Meeting Digest on Broadband Analog and Digital Optoelectronics, Optical Multiple Access Networks, Integrated Optoelectronics, and Smart Pixels - 4th International Conference on Indium Phosphide and Related Materials, IPRM 1992).

Research output: Chapter in Book/Report/Conference proceeding › Conference contribution

Yang, W, Abid, Z, Gopinath, A & Williamson, F 1992, InP MESFET with high breakdown voltage. in LEOS 1992 Summer Topical Meeting Digest on Broadband Analog and Digital Optoelectronics, Optical Multiple Access Networks, Integrated Optoelectronics, and Smart Pixels - 4th International Conference on Indium Phosphide and Related Materials, IPRM 1992., 235675, LEOS 1992 Summer Topical Meeting Digest on Broadband Analog and Digital Optoelectronics, Optical Multiple Access Networks, Integrated Optoelectronics, and Smart Pixels - 4th International Conference on Indium Phosphide and Related Materials, IPRM 1992, Institute of Electrical and Electronics Engineers Inc., pp. 368-370, LEOS 1992 Summer Topical Meeting Digest on Broadband Analog and Digital Optoelectronics, Optical Multiple Access Networks, Integrated Optoelectronics, and Smart Pixels - 4th International Conference on Indium Phosphide and Related Materials, IPRM 1992, Newport, United States, 4/21/92. https://doi.org/10.1109/ICIPRM.1992.235675

Yang W, Abid Z, Gopinath A, Williamson F. InP MESFET with high breakdown voltage. In LEOS 1992 Summer Topical Meeting Digest on Broadband Analog and Digital Optoelectronics, Optical Multiple Access Networks, Integrated Optoelectronics, and Smart Pixels - 4th International Conference on Indium Phosphide and Related Materials, IPRM 1992. Institute of Electrical and Electronics Engineers Inc. 1992. p. 368-370. 235675. (LEOS 1992 Summer Topical Meeting Digest on Broadband Analog and Digital Optoelectronics, Optical Multiple Access Networks, Integrated Optoelectronics, and Smart Pixels - 4th International Conference on Indium Phosphide and Related Materials, IPRM 1992). doi: 10.1109/ICIPRM.1992.235675

Yang, Wei ; Abid, Z. ; Gopinath, A. et al. / InP MESFET with high breakdown voltage. LEOS 1992 Summer Topical Meeting Digest on Broadband Analog and Digital Optoelectronics, Optical Multiple Access Networks, Integrated Optoelectronics, and Smart Pixels - 4th International Conference on Indium Phosphide and Related Materials, IPRM 1992. Institute of Electrical and Electronics Engineers Inc., 1992. pp. 368-370 (LEOS 1992 Summer Topical Meeting Digest on Broadband Analog and Digital Optoelectronics, Optical Multiple Access Networks, Integrated Optoelectronics, and Smart Pixels - 4th International Conference on Indium Phosphide and Related Materials, IPRM 1992).

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title = "InP MESFET with high breakdown voltage",

abstract = "We report the fabrication of InP n-channel MESFET with high breakdown voltage. Using buried p+ planar doping, we have obtained enhanced Schottky gate barrier greater than 1.0 eV and gate-drain breakdown voltage in excess of 30 volt. RF measurement gave fmax = 15 GHz for 1 μm gate length device and 9 GHz for 2 μm device.",

author = "Wei Yang and Z. Abid and A. Gopinath and F. Williamson",

year = "1992",

month = jan,

day = "1",

doi = "10.1109/ICIPRM.1992.235675",

language = "English (US)",

series = "LEOS 1992 Summer Topical Meeting Digest on Broadband Analog and Digital Optoelectronics, Optical Multiple Access Networks, Integrated Optoelectronics, and Smart Pixels - 4th International Conference on Indium Phosphide and Related Materials, IPRM 1992",

publisher = "Institute of Electrical and Electronics Engineers Inc.",

pages = "368--370",

booktitle = "LEOS 1992 Summer Topical Meeting Digest on Broadband Analog and Digital Optoelectronics, Optical Multiple Access Networks, Integrated Optoelectronics, and Smart Pixels - 4th International Conference on Indium Phosphide and Related Materials, IPRM 1992",

note = "LEOS 1992 Summer Topical Meeting Digest on Broadband Analog and Digital Optoelectronics, Optical Multiple Access Networks, Integrated Optoelectronics, and Smart Pixels - 4th International Conference on Indium Phosphide and Related Materials, IPRM 1992 ; Conference date: 21-04-1992 Through 24-04-1992",

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N2 - We report the fabrication of InP n-channel MESFET with high breakdown voltage. Using buried p+ planar doping, we have obtained enhanced Schottky gate barrier greater than 1.0 eV and gate-drain breakdown voltage in excess of 30 volt. RF measurement gave fmax = 15 GHz for 1 μm gate length device and 9 GHz for 2 μm device.

AB - We report the fabrication of InP n-channel MESFET with high breakdown voltage. Using buried p+ planar doping, we have obtained enhanced Schottky gate barrier greater than 1.0 eV and gate-drain breakdown voltage in excess of 30 volt. RF measurement gave fmax = 15 GHz for 1 μm gate length device and 9 GHz for 2 μm device.

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M3 - Conference contribution

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BT - LEOS 1992 Summer Topical Meeting Digest on Broadband Analog and Digital Optoelectronics, Optical Multiple Access Networks, Integrated Optoelectronics, and Smart Pixels - 4th International Conference on Indium Phosphide and Related Materials, IPRM 1992

PB - Institute of Electrical and Electronics Engineers Inc.

T2 - LEOS 1992 Summer Topical Meeting Digest on Broadband Analog and Digital Optoelectronics, Optical Multiple Access Networks, Integrated Optoelectronics, and Smart Pixels - 4th International Conference on Indium Phosphide and Related Materials, IPRM 1992

Y2 - 21 April 1992 through 24 April 1992

ER -

InP MESFET with high breakdown voltage

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