Abstract
In this article, the result from the experiment shows that BSIT's turn-off time increases remarkably with the temperature rising. On the basis of BSIT's operational mechanism, the turn-off process is discussed and divided into two parts, the two dimension process and the one dimension process, corresponding to saving time and falling time. The equation about turn-off time is induced and analyzed. According to this analysis, the influence of temperature on BSIT's turn-off time can be estimated and the result accords with experiment very well.
Original language | English (US) |
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Pages | 163-166 |
Number of pages | 4 |
State | Published - Dec 1 1998 |
Event | Proceedings of the 1998 5th International Conference on Solid-State and Integrated Circuit Technology - Beijing, China Duration: Oct 21 1998 → Oct 23 1998 |
Other
Other | Proceedings of the 1998 5th International Conference on Solid-State and Integrated Circuit Technology |
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City | Beijing, China |
Period | 10/21/98 → 10/23/98 |