Influence of temperature on BSIT's turn-off time

Yanfeng Jiang, Siyuan Li, Hairong Li

Research output: Contribution to conferencePaper

Abstract

In this article, the result from the experiment shows that BSIT's turn-off time increases remarkably with the temperature rising. On the basis of BSIT's operational mechanism, the turn-off process is discussed and divided into two parts, the two dimension process and the one dimension process, corresponding to saving time and falling time. The equation about turn-off time is induced and analyzed. According to this analysis, the influence of temperature on BSIT's turn-off time can be estimated and the result accords with experiment very well.

Original languageEnglish (US)
Pages163-166
Number of pages4
StatePublished - Dec 1 1998
EventProceedings of the 1998 5th International Conference on Solid-State and Integrated Circuit Technology - Beijing, China
Duration: Oct 21 1998Oct 23 1998

Other

OtherProceedings of the 1998 5th International Conference on Solid-State and Integrated Circuit Technology
CityBeijing, China
Period10/21/9810/23/98

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  • Cite this

    Jiang, Y., Li, S., & Li, H. (1998). Influence of temperature on BSIT's turn-off time. 163-166. Paper presented at Proceedings of the 1998 5th International Conference on Solid-State and Integrated Circuit Technology, Beijing, China, .