Influence of in-situ annealing ambient on p-type conduction in dual ion beam sputtered Sb-doped ZnO thin films

Sushil Kumar Pandey; Saurabh Kumar Pandey; Vishnu Awasthi; M. Gupta; U. P. Deshpande; Shaibal Mukherjee

doi:10.1063/1.4818819

Influence of in-situ annealing ambient on p-type conduction in dual ion beam sputtered Sb-doped ZnO thin films

Sushil Kumar Pandey
, Saurabh Kumar Pandey
, Vishnu Awasthi
, M. Gupta
, U. P. Deshpande
, Shaibal Mukherjee

Electrical and Computer Engineering

Research output: Contribution to journal › Article › peer-review

63 Scopus citations

Abstract

Sb-doped ZnO (SZO) films were deposited on c-plane sapphire substrates by dual ion beam sputtering deposition system and subsequently annealed in-situ in vacuum and in various proportions of O₂/(O₂ + N ₂)% from 0% (N₂) to 100% (O₂). Hall measurements established all SZO films were p-type, as was also confirmed by typical diode-like rectifying current-voltage characteristics from p-ZnO/n-ZnO homojunction. SZO films annealed in O₂ ambient exhibited higher hole concentration as compared with films annealed in vacuum or N₂ ambient. X-ray photoelectron spectroscopic analysis confirmed that Sb ⁵⁺ states were more preferable in comparison to Sb³⁺ states for acceptor-like Sb_Zn-2V_Zn complex formation in SZO films.

Original language	English (US)
Article number	072109
Journal	Applied Physics Letters
Volume	103
Issue number	7
DOIs	https://doi.org/10.1063/1.4818819
State	Published - Aug 12 2013

Bibliographical note

Funding Information:
This work was partially supported by Department of Science and Technology (DST) Fast Track Scheme for Young Scientist No. SR/FTP/ETA-101/2010, DST Science and Engineering Research Board (SERB) Project No. SR/S3/EECE/0142/2011, and Council of Scientific and Industrial Research (CSIR) Project No. 22(0608)/12/EMR-II. We are also grateful to the AFM Facility equipped at Sophisticated Instrument Centre at IIT Indore.

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title = "Influence of in-situ annealing ambient on p-type conduction in dual ion beam sputtered Sb-doped ZnO thin films",

abstract = "Sb-doped ZnO (SZO) films were deposited on c-plane sapphire substrates by dual ion beam sputtering deposition system and subsequently annealed in-situ in vacuum and in various proportions of O2/(O2 + N 2)\% from 0\% (N2) to 100\% (O2). Hall measurements established all SZO films were p-type, as was also confirmed by typical diode-like rectifying current-voltage characteristics from p-ZnO/n-ZnO homojunction. SZO films annealed in O2 ambient exhibited higher hole concentration as compared with films annealed in vacuum or N2 ambient. X-ray photoelectron spectroscopic analysis confirmed that Sb 5+ states were more preferable in comparison to Sb3+ states for acceptor-like SbZn-2VZn complex formation in SZO films.",

author = "Pandey, \{Sushil Kumar\} and \{Kumar Pandey\}, Saurabh and Vishnu Awasthi and M. Gupta and Deshpande, \{U. P.\} and Shaibal Mukherjee",

note = "Funding Information: This work was partially supported by Department of Science and Technology (DST) Fast Track Scheme for Young Scientist No. SR/FTP/ETA-101/2010, DST Science and Engineering Research Board (SERB) Project No. SR/S3/EECE/0142/2011, and Council of Scientific and Industrial Research (CSIR) Project No. 22(0608)/12/EMR-II. We are also grateful to the AFM Facility equipped at Sophisticated Instrument Centre at IIT Indore.",

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doi = "10.1063/1.4818819",

language = "English (US)",

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AU - Pandey, Sushil Kumar

AU - Kumar Pandey, Saurabh

AU - Awasthi, Vishnu

AU - Gupta, M.

AU - Deshpande, U. P.

AU - Mukherjee, Shaibal

N1 - Funding Information: This work was partially supported by Department of Science and Technology (DST) Fast Track Scheme for Young Scientist No. SR/FTP/ETA-101/2010, DST Science and Engineering Research Board (SERB) Project No. SR/S3/EECE/0142/2011, and Council of Scientific and Industrial Research (CSIR) Project No. 22(0608)/12/EMR-II. We are also grateful to the AFM Facility equipped at Sophisticated Instrument Centre at IIT Indore.

PY - 2013/8/12

Y1 - 2013/8/12

N2 - Sb-doped ZnO (SZO) films were deposited on c-plane sapphire substrates by dual ion beam sputtering deposition system and subsequently annealed in-situ in vacuum and in various proportions of O2/(O2 + N 2)% from 0% (N2) to 100% (O2). Hall measurements established all SZO films were p-type, as was also confirmed by typical diode-like rectifying current-voltage characteristics from p-ZnO/n-ZnO homojunction. SZO films annealed in O2 ambient exhibited higher hole concentration as compared with films annealed in vacuum or N2 ambient. X-ray photoelectron spectroscopic analysis confirmed that Sb 5+ states were more preferable in comparison to Sb3+ states for acceptor-like SbZn-2VZn complex formation in SZO films.

AB - Sb-doped ZnO (SZO) films were deposited on c-plane sapphire substrates by dual ion beam sputtering deposition system and subsequently annealed in-situ in vacuum and in various proportions of O2/(O2 + N 2)% from 0% (N2) to 100% (O2). Hall measurements established all SZO films were p-type, as was also confirmed by typical diode-like rectifying current-voltage characteristics from p-ZnO/n-ZnO homojunction. SZO films annealed in O2 ambient exhibited higher hole concentration as compared with films annealed in vacuum or N2 ambient. X-ray photoelectron spectroscopic analysis confirmed that Sb 5+ states were more preferable in comparison to Sb3+ states for acceptor-like SbZn-2VZn complex formation in SZO films.

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Influence of in-situ annealing ambient on p-type conduction in dual ion beam sputtered Sb-doped ZnO thin films

Abstract

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