Influence of HF concentration and specific resistivity of substrate Si on microstructure and luminescence behavior of porous Si

Keyphrases

• Anodic Oxidation 8%
• Aqueous Solution 25%
• Columnar 8%
• Electrochemical Etching 16%
• Electroluminescence 8%
• Electroluminescence Intensity 8%
• Fourier Transform Infrared Spectroscopy (FT-IR) 8%
• Galvanostatic Conditions 8%
• HF Concentration 100%
• High Magnification 8%
• Layer Preparation 16%
• Low Current Density 8%
• Luminescence Behavior 100%
• Luminescence Mechanism 8%
• Microscopic Techniques 8%
• Microstructure 16%
• Microstructure Behavior 100%
• Operative 8%
• P-type Si 8%
• Photoluminescence 8%
• Photoluminescence Intensity 8%
• Porous Si 100%
• Porous Silicon Layer 100%
• Potassium Nitrate 8%
• Preparation Conditions 16%
• Quantum Confinement Effect 8%
• Randomly Oriented 8%
• SEM-TEM 8%
• Single Crystal 8%
• Specific Resistivity 100%
• Surface Compounds 8%
• Surface Microstructure 8%
• Surface Morphology 8%
• TEM Images 8%
• Visible Luminescence 16%
• Wafer 8%

Material Science

• Density 8%
• Electrical Resistivity 100%
• Electrochemical Etching 16%
• Electroluminescence 16%
• Luminescence 100%
• Photoluminescence 16%
• Porous Silicon 100%
• Reproducibility 8%
• Scanning Electron Microscopy 8%
• Single Crystal 8%
• Surface Morphology 8%