Influence of `Gate-biasing Effect' on BSIT's saturated property

Yanfeng Jiang; Siyuan Li; Hairong Li; Xionghui Meng

Influence of `Gate-biasing Effect' on BSIT's saturated property

Yanfeng Jiang, Siyuan Li, Hairong Li, Xionghui Meng

Electrical and Computer Engineering

Research output: Contribution to conference › Paper › peer-review

Abstract

For BSIT, it is well-known that the ideal relation between the drain current and the drain voltage with respect to the source is pentode-like, the saturated property. But the result from practical measurement shows I_D increases slightly with the V_D rising, just like the phenomenon observed in BJT, which is affected by `Base Width Modulation'. Authors induce that the main cause of it is `Gate-biasing Effect'. In this article, the effect is discussed in detail.

Original language	English (US)
Pages	160-162
Number of pages	3
State	Published - Dec 1 1998
Event	Proceedings of the 1998 5th International Conference on Solid-State and Integrated Circuit Technology - Beijing, China Duration: Oct 21 1998 → Oct 23 1998

Other

Other	Proceedings of the 1998 5th International Conference on Solid-State and Integrated Circuit Technology
City	Beijing, China
Period	10/21/98 → 10/23/98

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title = "Influence of `Gate-biasing Effect' on BSIT's saturated property",

abstract = "For BSIT, it is well-known that the ideal relation between the drain current and the drain voltage with respect to the source is pentode-like, the saturated property. But the result from practical measurement shows ID increases slightly with the VD rising, just like the phenomenon observed in BJT, which is affected by `Base Width Modulation'. Authors induce that the main cause of it is `Gate-biasing Effect'. In this article, the effect is discussed in detail.",

author = "Yanfeng Jiang and Siyuan Li and Hairong Li and Xionghui Meng",

year = "1998",

month = dec,

day = "1",

language = "English (US)",

pages = "160--162",

note = "Proceedings of the 1998 5th International Conference on Solid-State and Integrated Circuit Technology ; Conference date: 21-10-1998 Through 23-10-1998",

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T1 - Influence of `Gate-biasing Effect' on BSIT's saturated property

AU - Jiang, Yanfeng

AU - Li, Siyuan

AU - Li, Hairong

AU - Meng, Xionghui

PY - 1998/12/1

Y1 - 1998/12/1

N2 - For BSIT, it is well-known that the ideal relation between the drain current and the drain voltage with respect to the source is pentode-like, the saturated property. But the result from practical measurement shows ID increases slightly with the VD rising, just like the phenomenon observed in BJT, which is affected by `Base Width Modulation'. Authors induce that the main cause of it is `Gate-biasing Effect'. In this article, the effect is discussed in detail.

AB - For BSIT, it is well-known that the ideal relation between the drain current and the drain voltage with respect to the source is pentode-like, the saturated property. But the result from practical measurement shows ID increases slightly with the VD rising, just like the phenomenon observed in BJT, which is affected by `Base Width Modulation'. Authors induce that the main cause of it is `Gate-biasing Effect'. In this article, the effect is discussed in detail.

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M3 - Paper

AN - SCOPUS:0032226831

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T2 - Proceedings of the 1998 5th International Conference on Solid-State and Integrated Circuit Technology

Y2 - 21 October 1998 through 23 October 1998

ER -

Influence of `Gate-biasing Effect' on BSIT's saturated property

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