Influence of `Gate-biasing Effect' on BSIT's saturated property

Yanfeng Jiang, Siyuan Li, Hairong Li, Xionghui Meng

Research output: Contribution to conferencePaperpeer-review

Abstract

For BSIT, it is well-known that the ideal relation between the drain current and the drain voltage with respect to the source is pentode-like, the saturated property. But the result from practical measurement shows ID increases slightly with the VD rising, just like the phenomenon observed in BJT, which is affected by `Base Width Modulation'. Authors induce that the main cause of it is `Gate-biasing Effect'. In this article, the effect is discussed in detail.

Original languageEnglish (US)
Pages160-162
Number of pages3
StatePublished - Dec 1 1998
EventProceedings of the 1998 5th International Conference on Solid-State and Integrated Circuit Technology - Beijing, China
Duration: Oct 21 1998Oct 23 1998

Other

OtherProceedings of the 1998 5th International Conference on Solid-State and Integrated Circuit Technology
CityBeijing, China
Period10/21/9810/23/98

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