TY - JOUR
T1 - Influence of carrier doping on the interaction of benzene and toluene with supported rhodium
AU - Ioannides, T.
AU - Tsapatsis, M.
AU - Koussathana, M.
AU - Verykios, X. E.
PY - 1995/4/1
Y1 - 1995/4/1
N2 - The interaction of benzene and toluene with rhodium crystallites dispersed on TiO2 carriers doped with W6+ cations of variable concentration is investigated employing steady-state hydrogenation, competitive hydrogenation, temperature-programmed desorption (TPD) and temperature-programmed surface reaction (TPSR). Turnover frequencies of both hydrogenation reactions are enhanced when Rh is dispersed on W6+-doped TiO2, while the ratio of the adsorption coefficients of toluene to benzene is reduced. The latter result implies that the toluene-Rh interaction has been weakened to a larger extent than the benzene-Rh interaction. TPD and TPSR experiments also reveal weakened adsorption bands of benzene and toluene with Rh supported on doped TiO2. These observations are discussed with respect to short-range and long-range electronic interactions at the metal-support interface, evoking the theory of metal-semiconductor contacts.
AB - The interaction of benzene and toluene with rhodium crystallites dispersed on TiO2 carriers doped with W6+ cations of variable concentration is investigated employing steady-state hydrogenation, competitive hydrogenation, temperature-programmed desorption (TPD) and temperature-programmed surface reaction (TPSR). Turnover frequencies of both hydrogenation reactions are enhanced when Rh is dispersed on W6+-doped TiO2, while the ratio of the adsorption coefficients of toluene to benzene is reduced. The latter result implies that the toluene-Rh interaction has been weakened to a larger extent than the benzene-Rh interaction. TPD and TPSR experiments also reveal weakened adsorption bands of benzene and toluene with Rh supported on doped TiO2. These observations are discussed with respect to short-range and long-range electronic interactions at the metal-support interface, evoking the theory of metal-semiconductor contacts.
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U2 - 10.1006/jcat.1995.1087
DO - 10.1006/jcat.1995.1087
M3 - Article
AN - SCOPUS:0000058566
SN - 0021-9517
VL - 152
SP - 331
EP - 340
JO - Journal of Catalysis
JF - Journal of Catalysis
IS - 2
ER -